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Product Detailed Parameters
- Description：RF TRANS NPN 15V 800MHZ TO-92
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：800MHz
- Noise Figure (dB Typ @ f)：6dB @ 200MHz
- Gain：24dB
- Power - Max：350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：25 @ 5mA, 10V
- Current - Collector (Ic) (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 Long Body
- Supplier Device Package：TO-92 (TO-226)
- Grade：-
- Qualification：-
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Overview
The MPSH17G is an NPN silicon transistor designed for CATV applications, housed in a TO-92 package. It features a collector-emitter voltage (VCEO) of 15 Vdc and a total device dissipation of 350 mW at 25°C. The component exhibits a DC current gain (hFE) ranging from 25 to 250 at 5.0 mA and 10 Vdc. Its small-signal characteristics include a current-gain bandwidth product (fT) of 800 MHz and a collector-base capacitance of 0.3 pF typical. Operating temperatures span from -55°C to +150°C.
Feature Summary
- Optimized for cable television signal processing
- High-frequency performance capability
- Lead-free packaging option available
Applications
- Cable television (CATV) systems
- RF amplifier circuits
- Signal processing modules
Procurement Notes
Verify the specific ordering suffix when sourcing components. The MPSH17G designation indicates a lead-free package variant supplied in boxes of 5,000 units. Confirm that the procurement channel provides official datasheets matching publication number MPSH17/D to ensure compliance with the manufacturer's specifications and quality standards.
Selection Notes
Select this component for low-voltage RF amplification tasks requiring high frequency response. Ensure the circuit design accommodates the 15 Vdc maximum rating and the thermal constraints associated with the TO-92 package. Validate the required current gain range against the application's biasing conditions before finalizing the design.
Part Context
This part belongs to onsemi's discrete transistor portfolio, specifically categorized as an NPN silicon device. It is manufactured by Semiconductor Components Industries, LLC, operating under the onsemi brand. The component is distinct from MOSFETs or IGBTs within the same catalog, serving as a bipolar junction transistor for specialized analog applications.
Replacement Considerations
Direct substitutes are not explicitly listed in the provided documentation. Evaluate alternative NPN transistors based on matching VCEO, fT, and package dimensions. Verify pinout compatibility and thermal resistance values to ensure functional equivalence in existing designs.
