MPSH81_D26Z

Overview

The MPSH81_D26Z is a PNP silicon RF transistor designed for general RF amplifier and mixer applications up to 250 MHz. It operates with collector currents ranging from 1.0 mA to 30 mA. Key electrical parameters include a collector-emitter breakdown voltage of 20 V, a continuous collector current rating of 50 mA, and a DC current gain (hFE) of 60 at 5.0 mA. The device features a current-gain-bandwidth product (fT) of 600 MHz at 100 MHz test frequency. Thermal characteristics specify a total device dissipation of 350 mW in a TO-92 package and 225 mW in an SOT-23 package.

Feature Summary

• Optimized for RF signal amplification and mixing operations within the 250 MHz frequency range.
• Engineered for stable performance across a wide operating junction temperature range from -55°C to +150°C.
• Provides high-frequency response capabilities suitable for small-signal processing tasks.

Applications

• General RF amplifier circuits
• RF mixer stages
• Small-signal processing modules

Procurement Notes

Verify the specific ordering suffix D26Z corresponds to the required TO-92 tape and reel packaging configuration. Confirm that the component source aligns with onsemi or authorized Fairchild Semiconductor distribution channels to ensure authenticity. Cross-reference the datasheet revision date against manufacturing lot codes to validate technical specifications prior to integration into production designs.

Selection Notes

Select this component when designing circuits requiring PNP polarity for frequencies up to 250 MHz. Ensure the application maintains collector currents between 1.0 mA and 30 mA for optimal linearity. Verify that the thermal management strategy accommodates the specified power dissipation limits of 350 mW for TO-92 or 225 mW for SOT-23 packages under maximum ambient temperature conditions.

Part Context

This part belongs to the MPSH81 series of PNP RF transistors manufactured by onsemi, formerly Fairchild Semiconductor. The MPSH81 variant utilizes Process 75 technology. It is functionally paired with the MMBTH81, which shares identical electrical characteristics but utilizes an SOT-23 surface-mount package instead of the through-hole TO-92 form factor found in the MPSH81.

Replacement Considerations

The MMBTH81 serves as a direct functional equivalent offering identical electrical specifications. Substitution requires adapting the PCB layout to accommodate the SOT-23 surface-mount footprint instead of the TO-92 radial leads. Verify thermal resistance differences between the two package types during the transition.