Single Bipolar Transistors MPSW42G product image

MPSW42G

  • Description:TRANS NPN 300V 0.5A TO92
  • Series:-

SKU:44c195174543 Category: Brand:

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MPSW42G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 300V 0.5A TO92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MPSW42G

  • Description:TRANS NPN 300V 0.5A TO92
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):300 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 30mA, 10V
  • Power - Max:1 W
  • Frequency - Transition:50MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92 (TO-226)

Single Bipolar Transistors datasheet and documents for MPSW42G

MPSW42G

Single Bipolar Transistors Overview

The MPSW42G is a single NPN silicon epitaxial planar transistor manufactured by onsemi. It is designed for high-voltage switching and amplification applications, featuring a collector-emitter voltage rating of 300 V and a continuous collector current of 500 mA. The device operates within a power dissipation limit of 625 mW at 25°C ambient temperature. It utilizes a surface-mount SOT-23-3 package configuration. Key electrical characteristics include a minimum DC current gain (hFE) of 100 and a transition frequency (fT) of 80 MHz. The component supports an operating junction temperature range from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • High voltage capability with 300 V collector-emitter breakdown voltage
  • Surface-mount SOT-23-3 package for compact PCB integration
  • High DC current gain suitable for amplifier stages
  • Wide operating temperature range for industrial environments

Single Bipolar Transistors Applications

  • General-purpose high-voltage switching circuits
  • Audio pre-amplifier stages
  • Voltage regulator output transistors
  • Driver circuits for relays or solenoids

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'G' indicates RoHS compliance when sourcing. Confirm the package type matches the design footprint requirements. Check the latest datasheet revision for any updates to absolute maximum ratings. Ensure thermal management strategies account for the 625 mW power dissipation limit in the selected enclosure.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high voltage handling in a small surface-mount form factor. Compare against similar NPN transistors if higher current capacity is needed. Consider the thermal resistance of the SOT-23 package for heat dissipation needs. Verify that the required current gain meets the circuit's drive specifications.

Single Bipolar Transistors Part Context

The MPSW42G belongs to the MPSW series of one-watt high-voltage transistors from onsemi. This series provides robust performance for general-purpose applications. The G suffix typically denotes environmental compliance. It serves as a modern replacement for older discrete high-voltage NPN devices in consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

  • MPSW42
  • MPSW42RLRA
  • MPSW42RLRAG

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the MPSW42G?

The maximum collector-emitter voltage (VCEO) is 300 V.

Which package style does the MPSW42G use?

It uses a surface-mount SOT-23-3 package.

What is the minimum DC current gain (hFE) specified?

The minimum DC current gain is 100 under specified test conditions.

MPSW42GMPSW42G

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