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MPSW42G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 300V 0.5A TO92. Review the specifications below when checking this part for your BOM.
The MPSW42G is a single NPN silicon epitaxial planar transistor manufactured by onsemi. It is designed for high-voltage switching and amplification applications, featuring a collector-emitter voltage rating of 300 V and a continuous collector current of 500 mA. The device operates within a power dissipation limit of 625 mW at 25°C ambient temperature. It utilizes a surface-mount SOT-23-3 package configuration. Key electrical characteristics include a minimum DC current gain (hFE) of 100 and a transition frequency (fT) of 80 MHz. The component supports an operating junction temperature range from -55°C to +150°C.
Verify the specific suffix 'G' indicates RoHS compliance when sourcing. Confirm the package type matches the design footprint requirements. Check the latest datasheet revision for any updates to absolute maximum ratings. Ensure thermal management strategies account for the 625 mW power dissipation limit in the selected enclosure.
Select this component for designs requiring high voltage handling in a small surface-mount form factor. Compare against similar NPN transistors if higher current capacity is needed. Consider the thermal resistance of the SOT-23 package for heat dissipation needs. Verify that the required current gain meets the circuit's drive specifications.
The MPSW42G belongs to the MPSW series of one-watt high-voltage transistors from onsemi. This series provides robust performance for general-purpose applications. The G suffix typically denotes environmental compliance. It serves as a modern replacement for older discrete high-voltage NPN devices in consumer and industrial electronics.
The maximum collector-emitter voltage (VCEO) is 300 V.
It uses a surface-mount SOT-23-3 package.
The minimum DC current gain is 100 under specified test conditions.
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