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The MQ2N4093 is an N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-18-3 through-hole package. The device features a drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of -40 V. Key electrical parameters include a zero-gate-voltage drain current of 6.6 mA, a continuous drain current of 30 mA, and a drain-source on-resistance of 30 Ohms. Power dissipation is rated at 360 mW, with an operating temperature range from -65 °C to +175 °C.
Verify the specific part number suffix against official Microchip documentation to confirm exact binning or testing criteria. Ensure the procurement channel provides valid traceability records. Confirm that the received components match the specified TO-18-3 package dimensions and pinout configuration before integration into the design.
Select this component when a single N-channel JFET with a 40 V breakdown rating is required. Consider the 6.6 mA zero-bias current and 30 Ohm on-resistance for impedance matching needs. Evaluate the 360 mW power dissipation limit relative to thermal management constraints in the target application environment.
This component belongs to the Microchip JFET product line, specifically designed for analog signal processing tasks. It serves as a fundamental active element in electronic circuits requiring high input impedance and low noise characteristics. The TO-18-3 metal can package provides environmental protection and reliable thermal conduction for discrete semiconductor applications.
Cross-reference with other Microchip N-channel JFETs sharing the TO-18-3 package and similar electrical ratings. Verify compatibility of drain-source voltage, gate-source voltage, and zero-bias current specifications before substitution.