MQ2N4858UB

MQ2N4858UB

$67.12
  • Description:JFET N-CH 40V UB
  • Series:-

SKU:fc794945c08a Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET N-CH 40V UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):40 V
  • Drain to Source Voltage (Vdss):40 V
  • Current - Drain (Idss) @ Vds (Vgs=0):8 mA @ 15 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:800 mV @ 500 pA
  • Input Capacitance (Ciss) (Max) @ Vds:18pF @ 10V
  • Resistance - RDS(On):60 Ohms
  • Power - Max:360 mW
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:-
  • Qualification:-

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MQ2N4858UB

Overview

The MQ2N4858UB is a silicon N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. Designed for surface-mount applications, it utilizes an SMD-3 package configuration. The device features a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of 30 V. It supports a continuous drain current of 175 mA with a maximum power dissipation of 1.8 W. The component operates within a temperature range from -65°C to +200°C.

Feature Summary

  • Utilizes silicon technology for robust performance in high-temperature environments
  • Designed for surface-mount installation using an SMD-3 package
  • Provides single N-channel JFET configuration

Applications

  • High-temperature electronic circuit design
  • Surface-mount transistor assemblies
  • General-purpose switching and amplification circuits

Procurement Notes

Verify the specific datasheet for the MQ2N4858UB to confirm all electrical characteristics and mechanical dimensions prior to integration. Ensure that the SMD-3 package footprint matches the target PCB layout requirements. Confirm compliance with relevant environmental standards and material declarations as specified in the official product documentation.

Selection Notes

Select this component when a surface-mount N-channel JFET with a 30 V rating and 1.8 W power dissipation capability is required. The wide operating temperature range up to 200°C makes it suitable for demanding thermal conditions. Verify that the 175 mA continuous drain current meets the specific load requirements of the intended application circuit.

Part Context

This part belongs to the Microchip Technology discrete semiconductor portfolio, specifically within the JFET category. It represents a silicon-based solution designed for modern surface-mount manufacturing processes. The component is engineered to provide reliable performance in compact electronic designs requiring high-temperature stability and precise field-effect control.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Consult official Microchip resources or authorized distributors for verified cross-reference information before considering alternative components.

MQ2N4858UBMQ2N4858UB
$67.12
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