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The MQ2N4858UB is a silicon N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. Designed for surface-mount applications, it utilizes an SMD-3 package configuration. The device features a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of 30 V. It supports a continuous drain current of 175 mA with a maximum power dissipation of 1.8 W. The component operates within a temperature range from -65°C to +200°C.
Verify the specific datasheet for the MQ2N4858UB to confirm all electrical characteristics and mechanical dimensions prior to integration. Ensure that the SMD-3 package footprint matches the target PCB layout requirements. Confirm compliance with relevant environmental standards and material declarations as specified in the official product documentation.
Select this component when a surface-mount N-channel JFET with a 30 V rating and 1.8 W power dissipation capability is required. The wide operating temperature range up to 200°C makes it suitable for demanding thermal conditions. Verify that the 175 mA continuous drain current meets the specific load requirements of the intended application circuit.
This part belongs to the Microchip Technology discrete semiconductor portfolio, specifically within the JFET category. It represents a silicon-based solution designed for modern surface-mount manufacturing processes. The component is engineered to provide reliable performance in compact electronic designs requiring high-temperature stability and precise field-effect control.
Publicly confirmed substitute part numbers are not available in the provided source data. Consult official Microchip resources or authorized distributors for verified cross-reference information before considering alternative components.