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Product Detailed Parameters
- Description：JFET N-CH 30V UB
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：50 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：4 V @ 500 pA
- Input Capacitance (Ciss) (Max) @ Vds：18pF @ 10V
- Resistance - RDS(On)：25 Ohms
- Power - Max：360 mW
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：3-SMD, No Lead
- Supplier Device Package：UB
- Grade：Military
- Qualification：MIL-PRF-19500/385
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Overview
The MQ2N4859UB/TR is a single N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology using silicon technology. It is designed for surface-mount installation in an SMD-3 package. The device features a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of 30 V. It supports a continuous drain current of 175 mA with a drain-source on-resistance of 25 Ohms. The component handles a power dissipation of 1.8 W and operates within a temperature range from -65°C to +200°C.
Feature Summary
- Utilizes silicon JFET technology for robust semiconductor performance.
- Engineered for high-temperature operation up to 200°C.
- Configured as a single N-channel device for surface-mount applications.
Applications
- High-temperature electronic circuit design
- Surface-mount transistor assemblies
- Silicon-based analog switching applications
Procurement Notes
Verify the specific ordering suffix and manufacturer part number against official Microchip documentation before procurement. Confirm that the SMD-3 package and single N-channel configuration match the design requirements. Ensure compliance with the specified operating temperature range and electrical ratings for the intended application environment.
Selection Notes
Select this component when a single N-channel JFET with a 30 V breakdown rating and 175 mA current capacity is required. Consider the SMD-3 package for surface-mount constraints. Verify that the 1.8 W power dissipation and -65°C to +200°C operating range meet the thermal and electrical demands of the target circuit design.
Part Context
This part belongs to the Microchip Technology JFET product line, specifically categorized under transistors. It is a silicon-based discrete semiconductor device intended for use in various electronic applications requiring field-effect transistor functionality. The component is distinct from bipolar junction transistors and other FET types within the manufacturer's portfolio.
Replacement Considerations
Consult official Microchip datasheets for verified substitute part numbers. Do not assume cross-compatibility with other JFET models without verifying pinout, electrical parameters, and package dimensions against the original specification.
