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The MQ2N5114UB/TR is a P-channel silicon Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It features a low-profile surface mount UB-4 package and operates within a temperature range of -65°C to +200°C. Key electrical specifications include a drain-source breakdown voltage of 30V, a gate-source breakdown voltage of 30V, and a maximum power dissipation of 500mW. The device exhibits a typical on-resistance of 175 ohms and a gate-source cutoff voltage of 4V.
Verify the specific suffix configuration against official datasheets to confirm screening levels and RoHS compliance status. Ensure that ordering requirements align with the manufacturer's minimum order quantities and packaging specifications. Cross-reference part numbers with current product change notifications to validate availability and manufacturing updates before procurement.
Select this component when a P-channel JFET compatible with the 2N5114 series is required in a surface mount format. Consider the UB-4 package dimensions for board space constraints. Evaluate the thermal performance limits relative to the specified operating temperature range and power dissipation capabilities for the intended circuit environment.
This device belongs to the Microchip Technology JFET family, specifically designed as a surface mount alternative to through-hole equivalents. It provides a robust solution for applications requiring high reliability and compact form factors. The product line includes various screening options to meet diverse industry standards and environmental requirements.
The commercial version serves as a surface mount equivalent to the JEDEC registered 2N5114 series. Verify pinout compatibility and electrical parameters against legacy TO-18 packaged devices if transitioning from through-hole designs.