ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：JFET P-CH 30V UB
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：15 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：3 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：25pF @ 15V
- Resistance - RDS(On)：100 Ohms
- Power - Max：500 mW
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：3-SMD, No Lead
- Supplier Device Package：UB
- Grade：Military
- Qualification：MIL-PRF-19500
Download product information
Overview
The MQ2N5115UB/TR is a P-channel silicon Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It features a single-element configuration in a surface-mount package. Key electrical specifications include a drain-source breakdown voltage of 30 V, a gate-source breakdown voltage of 30 V, and a gate-source cutoff voltage of 6 V. The device exhibits a drain-source current of 7 mA at zero gate-source voltage and an on-resistance of 100 Ohms. Power dissipation is rated at 500 mW, with an operating temperature range from -65°C to +200°C.
Feature Summary
- Surface-mount P-channel JFET design compatible with JEDEC registered series equivalents.
- Low-profile ceramic package construction suitable for high-reliability applications.
- Extended thermal stability supporting operation up to +200°C.
Applications
- High-reliability analog signal processing circuits
- Military and aerospace electronic systems requiring screened components
- Precision low-noise amplifier stages
Procurement Notes
Verify the specific suffix against official Microchip documentation to confirm screening levels and RoHS compliance status. Ensure the ordering part number matches the required package type and electrical characteristics. Confirm availability through authorized distributors as lead times may vary. Validate that the component meets the specific environmental requirements of the target application before procurement.
Selection Notes
Select this component when a surface-mount P-channel JFET with high-temperature capability is required. Compare the 100 Ohm on-resistance and 30 V breakdown limits against circuit requirements. Consider the TO-18 equivalent if through-hole mounting is preferred instead of the surface-mount UB package variant.
Part Context
This device belongs to the 2N5114 through 2N5116 family of small-signal field-effect transistors. The MQ prefix typically indicates military-grade screening or qualification standards. These devices serve as surface-mount alternatives to traditional through-hole JFETs, maintaining similar electrical performance while enabling automated assembly processes.
Replacement Considerations
Direct replacements include the commercial grade 2N5115UB or the through-hole MQ2N5115. Verify pinout compatibility and ensure the substitute meets the required power dissipation and temperature ratings for the specific application environment.
