MRF10120

MRF10120

$247.40
  • Description:RF TRANS NPN 55V 355C-02
  • Series:-

SKU:b7dcd82f9f57 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 55V 355C-02
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):55V
  • Frequency - Transition:-
  • Noise Figure (dB Typ @ f):-
  • Gain:8.5dB
  • Power - Max:120W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 5A, 5V
  • Current - Collector (Ic) (Max):15A
  • Operating Temperature:200°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:355C-02
  • Supplier Device Package:355C-02, Style 1
  • Grade:-
  • Qualification:-

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MRF10120

Overview

The MRF10120 is a microwave long pulse power silicon NPN transistor designed for operation within the 960–1215 MHz frequency range. It delivers a peak output power of 120 W when tested at 1.215 GHz with a 36 Vdc supply. The device guarantees a minimum gain of 7.6 dB and typically achieves 8.5 dB. It features hermetically sealed packaging, silicon nitride passivation, and gold metalized emitter ballasting to ensure longevity and resistance to metal migration.

Feature Summary

  • Internal input and output matching networks are integrated to support broadband operation across the specified frequency band.
  • The component undergoes 100% testing for load mismatch tolerance at all phase angles with a 3:1 VSWR condition.
  • Gold metalized emitters are ballasted to provide extended operational life and enhanced resistance to metal migration.

Applications

  • JTIDS transmitters
  • Mode S transmitters

Procurement Notes

Verify the specific package style against the CASE 355C-02 standard before integration. Confirm that the application environment supports the required 36 Vdc supply voltage and thermal management capabilities necessary for long pulse power dissipation. Ensure compatibility with common base amplifier configurations as intended by the manufacturer's design specifications.

Selection Notes

Select this component for applications requiring high peak power in the L-band spectrum. The internal matching simplifies circuit design for broadband requirements. Verify that the system can handle the specified 3:1 VSWR conditions without compromising device reliability or performance metrics during operation.

Part Context

This part belongs to MACOM's lineup of microwave long pulse power silicon NPN transistors. It is specifically engineered for military and aerospace communication systems operating in the 960–1215 MHz range. The hermetically sealed construction ensures durability in demanding environments typical of radar and secure communication platforms.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Consult MACOM technical support for potential alternatives if discontinuation occurs.

FAQ

What is the guaranteed gain at the test frequency?

The device guarantees a minimum gain of 7.6 dB, with a typical value of 8.5 dB, measured at 1.215 GHz with a 36 Vdc supply.

Is the device tested for load mismatch?

Yes, the MRF10120 is 100% tested for load mismatch at all phase angles with a 3:1 VSWR condition.

What type of packaging does the MRF10120 use?

It utilizes a hermetically sealed industry standard package identified as CASE 355C-02, Style 1.

MRF10120MRF10120
$247.40
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