MRF426

Overview

The MRF426 is an NPN silicon RF power transistor designed for high-gain driver and output linear amplifier stages in HF/SSB equipment operating from 1.5 to 30 MHz. At 28 V and 30 MHz, it delivers 25 W (PEP) output power with a minimum gain of 22 dB and 35% efficiency. The device exhibits intermodulation distortion of -30 dB (max) at full power. It is characterized for Class A and AB operation and is 100% tested for load mismatch at all phase angles with a 30:1 VSWR.

Feature Summary

• Designed for high-gain driver and output linear amplifier stages in HF/SSB equipment
• Characterized for Class A and AB operation modes
• 100% tested for load mismatch at all phase angles with 30:1 VSWR

Applications

• High-gain driver stages in HF/SSB equipment
• Output linear amplifier stages in HF/SSB equipment
• HF/SSB communication systems

Procurement Notes

Verify the component against the official MACOM datasheet Rev. V1 specifications. Confirm the package style matches CASE 211-07, STYLE 1. Ensure the application environment supports the specified 28 V supply and 30 MHz frequency range. Check for any specific handling requirements related to RF power transistors.

Selection Notes

Select the MRF426 when designing HF/SSB amplifiers requiring 25 W PEP output at 30 MHz with a minimum gain of 22 dB. Consider its Class A and AB characterization for linear applications. Verify thermal management capabilities align with the 35% efficiency specification at the target operating frequency.

Part Context

The MRF426 belongs to MACOM's RF Line of NPN silicon power transistors. It serves as a BLX 13 equivalent for HF applications. The device is optimized for linear amplifier stages in high-frequency communication equipment, providing reliable performance under demanding load mismatch conditions.

Replacement Considerations

The MRF426 is documented as a BLX 13 equivalent. Verify pinout compatibility and electrical parameters before substituting.