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Product Detailed Parameters
- Description：RF TRANS NPN 70V 1.5GHZ TO-39
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：70V
- Frequency - Transition：1.5GHz
- Noise Figure (dB Typ @ f)：-
- Gain：13.5dB
- Power - Max：3.5W
- DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 50mA, 6V
- Current - Collector (Ic) (Max)：400mA
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-39
- Supplier Device Package：TO-39
- Grade：-
- Qualification：-
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Overview
The MRF544 is an NPN RF bipolar transistor designed for high-frequency applications. It operates with a maximum collector-emitter voltage of 70V and a continuous collector current of 400mA. The device features a transition frequency of 1.5GHz and delivers a typical gain of 13.5dB. It is housed in a TO-39 through-hole package, suitable for robust mounting in medium and high-resolution color video display monitors.
Feature Summary
- NPN polarity configuration optimized for RF and microwave discrete low power applications
- High transition frequency capability up to 1.5GHz for efficient signal processing
- Robust TO-39 through-hole package design ensuring secure mechanical mounting
Applications
- High frequency circuit implementations
- Medium resolution color video display monitors
- High resolution color video display monitors
Procurement Notes
Verify the manufacturer designation matches Microsemi Corporation or its successor entities such as Microchip Technology, as corporate acquisitions may affect branding on official documentation. Confirm the package type is strictly TO-39 through-hole construction. Ensure the electrical specifications align with the 70V collector-emitter voltage rating and 1.5GHz transition frequency requirements for your specific high-frequency application needs.
Selection Notes
Select this component when a ruggedized NPN transistor is required for RF environments operating near 1.5GHz. The TO-39 package provides superior thermal dissipation compared to surface-mount alternatives. Consider the 13.5dB typical gain figure for amplifier stages where moderate signal boosting is necessary without excessive complexity.
Part Context
This part belongs to the category of RF & Microwave Discrete Low Power Transistors manufactured by Microsemi. These components are engineered for reliability in demanding electronic systems. The MRF544 specifically addresses the need for stable NPN performance in video and RF monitoring equipment requiring durable through-hole integration.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs before attempting substitution with generic NPN transistors.
