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The MRF555G is an NPN bipolar RF transistor manufactured by Microsemi Corporation, designed for wideband large signal stages in the UHF frequency range. It operates with a collector current of 200mA and a maximum power dissipation of 1.25W. The device features a transition frequency of 470MHz and a collector-emitter breakdown voltage of 16V. Specified at 12.5V and 470MHz, it provides high gain suitable for radio frequency applications.
Verify component authenticity through authorized Microchip distributors. Confirm RoHS compliance status as documentation indicates lead-free variants exist. Check lifecycle status as obsolete or NRND to ensure long-term supply availability. Validate package type matches design requirements before ordering.
Select this component for UHF applications requiring wideband large signal handling. Ensure circuit design supports the 16V collector-emitter breakdown limit. Consider thermal management for 1.25W power dissipation. Verify compatibility with 470MHz operational frequencies for optimal gain performance.
The MRF555G belongs to Microsemi's bipolar RF transistor portfolio, serving as a specialized component for UHF frequency operations. It complements similar devices like the MRF5812G but targets lower frequency ranges up to 470MHz. This part fits within the broader category of discrete semiconductors used in radio frequency engineering.
Public confirmed substitute part numbers are not available in verified documentation. The component lifecycle status may be obsolete, requiring careful evaluation of alternative sources or redesign strategies for new implementations.