MRF555G

MRF555G

$1.35
  • Description:RF TRANS NPN 16V 470MHZ
  • Series:-

SKU:08f300c78f38 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 16V 470MHZ
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):16V
  • Frequency - Transition:470MHz
  • Noise Figure (dB Typ @ f):-
  • Gain:12.5dB
  • Power - Max:3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 100mA, 5V
  • Current - Collector (Ic) (Max):500mA
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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MRF555G

Overview

The MRF555G is an NPN bipolar RF transistor manufactured by Microsemi Corporation, designed for wideband large signal stages in the UHF frequency range. It operates with a collector current of 200mA and a maximum power dissipation of 1.25W. The device features a transition frequency of 470MHz and a collector-emitter breakdown voltage of 16V. Specified at 12.5V and 470MHz, it provides high gain suitable for radio frequency applications.

Feature Summary

  • Designed primarily for wideband large signal stages in the UHF frequency range
  • NPN bipolar construction optimized for high-frequency radio frequency operations
  • Specified performance characteristics at standard operating conditions of 12.5V and 470MHz

Applications

  • UHF wideband amplifier circuits
  • Large signal RF stage implementations
  • High-frequency radio transmitter modules

Procurement Notes

Verify component authenticity through authorized Microchip distributors. Confirm RoHS compliance status as documentation indicates lead-free variants exist. Check lifecycle status as obsolete or NRND to ensure long-term supply availability. Validate package type matches design requirements before ordering.

Selection Notes

Select this component for UHF applications requiring wideband large signal handling. Ensure circuit design supports the 16V collector-emitter breakdown limit. Consider thermal management for 1.25W power dissipation. Verify compatibility with 470MHz operational frequencies for optimal gain performance.

Part Context

The MRF555G belongs to Microsemi's bipolar RF transistor portfolio, serving as a specialized component for UHF frequency operations. It complements similar devices like the MRF5812G but targets lower frequency ranges up to 470MHz. This part fits within the broader category of discrete semiconductors used in radio frequency engineering.

Replacement Considerations

Public confirmed substitute part numbers are not available in verified documentation. The component lifecycle status may be obsolete, requiring careful evaluation of alternative sources or redesign strategies for new implementations.

MRF555GMRF555G
$1.35
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