MRF5812M

Overview

The MRF5812M is a silicon NPN UHF band RF small signal transistor manufactured by Microsemi Corporation. It is designed for high current, low power, and low noise amplifier applications operating up to 1.0 GHz. Key electrical parameters include a collector-emitter voltage of 15 Vdc, a collector-base voltage of 30 Vdc, and an emitter-base voltage rating. The device supports a continuous collector current of 200 mA. It exhibits a low noise figure of 2.5 dB at 500 MHz, making it suitable for sensitive RF front-end circuits.

Feature Summary

• Optimized for low noise performance in UHF frequency bands
• Capable of handling high current with low power consumption
• Designed for reliable operation as a small signal amplifier

Applications

• Low noise amplifiers (LNA) up to 1.0 GHz
• UHF band RF signal processing circuits
• Small signal amplification in communication systems

Procurement Notes

Verify the component authenticity through official Microsemi channels or authorized distributors. Confirm that the specific part number matches the required electrical specifications, particularly the 15V collector-emitter voltage and 200mA current ratings. Ensure compliance with RoHS standards if environmental regulations apply to your project. Request detailed datasheets to validate pinout and thermal characteristics before integration.

Selection Notes

Select this component when designing UHF amplifiers requiring low noise figures around 2.5 dB at 500 MHz. It is appropriate for applications demanding high current capability within a low power envelope. Consider the 15V collector-emitter voltage limit when determining biasing conditions. Evaluate thermal management requirements based on the package type and expected power dissipation in the target circuit environment.

Part Context

This transistor belongs to the MRF series of bipolar RF transistors from Microsemi Corporation. The 'M' suffix typically denotes a specific packaging variant, often bulk or tape-and-reel, distinct from other suffixes like 'R2'. These devices are engineered for general-purpose RF amplification tasks where linearity and noise performance are critical factors in system design.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative components by matching key parameters such as NPN configuration, UHF frequency range, and similar voltage/current ratings. Consult manufacturer cross-reference guides for potential equivalents.