MRF581AG

Overview

The MRF581AG is a discrete NPN silicon RF transistor manufactured by Microsemi Corporation. Designed for high current, low power, and low noise amplifier applications up to 1.0 GHz, this component utilizes the MacroX package for cost-effective integration. Key electrical characteristics include a noise figure of 2.5 dB at 500 MHz and a gain of 15.5 dB at the same frequency under optimum noise conditions. The device achieves an Fttau of 5.0 GHz when operated at 10V and 75mA, ensuring reliable performance in microwave frequency ranges.

Feature Summary

• Optimized for low noise operation in high-frequency amplifier circuits
• Capable of delivering high gain at optimum noise figure settings
• Engineered for high current handling with low power consumption
• Utilizes MacroX packaging for efficient thermal and mechanical integration

Applications

• Low noise amplifiers operating up to 1.0 GHz
• High-frequency microwave signal processing stages
• Communication systems requiring low noise figure performance

Part Context

The MRF581AG belongs to the MRF series of RF and microwave discrete transistors produced by Microsemi. This family focuses on providing cost-effective solutions for low power and low noise applications. The specific AG suffix typically denotes a military-grade or enhanced reliability variant within the standard MRF581 product line, adhering to strict quality standards for defense and aerospace environments.

Replacement Considerations

Direct replacements include the standard commercial grade MRF581 from Microsemi or Advanced Power Technology. For equivalent specifications from other manufacturers, consider the Motorola MRF5811LT1. Verify that any substitute maintains compatibility with the MacroX package footprint and meets the required 1.0 GHz operational limits.