MRF586

Overview

The MRF586 is a silicon NPN transistor designed for VHF and UHF equipment. It operates with a collector-emitter breakdown voltage of 17V and a maximum collector current of 200mA. The device features a transition frequency of 3GHz and delivers a gain of 13.5dB. Maximum power dissipation is rated at 1W. It is housed in a TO-39 through-hole package, suitable for high-frequency applications requiring low noise and high gain characteristics.

Feature Summary

• Silicon NPN construction optimized for VHF and UHF frequencies
• High gain performance with low noise characteristics
• Suitable for amplifier, pre-driver, driver, and output stages

Applications

• CATV amplifiers
• MATV amplifiers
• Oscillator circuits

Procurement Notes

Verify the manufacturer marking on the component body to confirm Microsemi Corporation origin. Ensure the package matches the specified TO-39 through-hole configuration. Cross-reference the part number against official datasheets to validate electrical parameters such as the 17V breakdown voltage and 3GHz transition frequency before integration into designs.

Selection Notes

Select this component when designing VHF or UHF systems requiring a discrete NPN transistor with specific low-noise attributes. The 1W power rating and 17V breakdown voltage define its operational limits. Consider the TO-39 package for through-hole mounting requirements in amplifier or oscillator topologies where high gain is necessary.

Part Context

The MRF586 belongs to the category of RF & microwave discrete low power transistors. It is specifically engineered for high-frequency operations within the VHF and UHF bands. This component serves as a fundamental building block for signal amplification and generation in communication infrastructure.

Replacement Considerations

Consult official Microsemi documentation for direct substitutes. Verify that any alternative maintains identical pinout, package type, and electrical specifications to ensure circuit compatibility without redesign.