MRF7S27130HSR3

Overview

The MRF7S27130HSR3 is an RF MOSFET transistor from the HV7 series, designed for high-power applications in the S-band. It operates at a center frequency of 2.7 GHz and delivers 130 W of output power. The device utilizes Metal-Oxide-Semiconductor (MOS) technology with enhancement mode operation. Key electrical specifications include a minimum drain-source breakdown voltage of 65 V. It is housed in a flange mount package (CASE 465A-06) with two terminals, where the case connection serves as the source. The component supports a maximum operating temperature of 225 °C.

Feature Summary

• High power density design optimized for S-band radio frequency amplification
• Robust thermal management capability supporting elevated junction temperatures up to 225 °C
• Enhancement mode metal-oxide-semiconductor construction for reliable switching performance

Applications

• Military radar systems requiring high linearity and power output
• Electronic warfare equipment utilizing S-band frequencies
• Communications infrastructure demanding robust RF power generation

Procurement Notes

Verify the specific manufacturer designation, as the component history involves transitions between Freescale Semiconductor and NXP Semiconductors. Confirm that the ordering suffix matches the required flange mount package variant. Ensure compliance with RoHS standards and check for any specific EAR99 classification requirements relevant to your jurisdiction before finalizing procurement.

Selection Notes

Select this component when designing S-band amplifiers requiring 130 W output power. The 65 V breakdown voltage defines the supply voltage constraints for the circuit design. Consider the flange mount package for efficient heat dissipation solutions. Verify that the enhancement mode characteristics align with the gate drive requirements of the intended amplifier topology.

Part Context

This device belongs to the HV7 series of RF MOSFET transistors, engineered for high-voltage and high-power density applications. Originally developed by Freescale Semiconductor, the product line was integrated into NXP's portfolio following corporate restructuring. The series is characterized by its suitability for demanding military and aerospace environments where reliability and performance in the S-band are critical.

Replacement Considerations

Consult official replacement guides for cross-references within the HV7 series or equivalent NXP RF MOSFETs. Verify pinout compatibility and thermal interface dimensions when substituting with other flange-mounted devices.