MRF8372GR1

Overview

The MRF8372GR1 is an NPN silicon RF bipolar transistor manufactured by Microsemi Corporation. It operates at a transition frequency of 870MHz with a maximum collector current of 200mA and a breakdown voltage of 16V. The device delivers 2.2W of power in an 8-SOIC surface-mount package. Designed for wideband large-signal predriver stages, it targets applications in the 800 MHz and UHF frequency ranges.

Feature Summary

• Engineered for wideband large-signal predriver stages
• Optimized for operation in 800 MHz and UHF frequency ranges
• Utilizes NPN silicon technology for RF performance

Applications

• Wideband large-signal predriver stages
• 800 MHz frequency range circuits
• UHF frequency range circuits

Procurement Notes

Verify component authenticity through authorized channels due to obsolete status. Confirm datasheet revisions as specifications may vary across production batches. Check RoHS compliance details carefully since information is unavailable. Validate package dimensions against design requirements before integration. Ensure supply chain stability given potential discontinuation risks.

Selection Notes

Select this component for wideband predriver applications requiring high linearity in the 800 MHz and UHF bands. Consider thermal management needs for 2.2W output power. Evaluate 8-SOIC footprint compatibility with existing PCB layouts. Compare performance metrics against newer alternatives if long-term availability is critical.

Part Context

This part belongs to the Bipolar RF Transistors category from Microsemi Corporation. It represents legacy silicon technology designed for specific RF amplification tasks. The product line focuses on discrete semiconductor solutions for communication systems.

Replacement Considerations

No public confirmed substitute part numbers are available.