MS1076A

Overview

The MS1076A is a 28-volt epitaxial NPN silicon planar transistor designed primarily for Single Sideband (SSB) and VHF communications applications. This device utilizes an emitter ballasted die geometry to ensure maximum ruggedness and reliability under demanding operating conditions. It features gold metallization for enhanced performance stability. The component operates at a frequency of 30 MHz with a minimum gain of 12 dB in a common emitter configuration, delivering a peak output power of 220 W PEP.

Feature Summary

• Emitter ballasted die geometry for high ruggedness
• Gold metallization construction
• Optimized for SSB and VHF communications

Applications

• Single Sideband (SSB) transmitters
• VHF communication systems

Procurement Notes

Verify the specific suffix 'A' against official Microsemi documentation, as primary sources reference the MS1076. Confirm current lifecycle status, as related models are marked End-of-Life. Ensure compatibility with existing RF circuit designs requiring 28V operation and 30 MHz bandwidth before procurement.

Selection Notes

Select this component for applications requiring high-power RF amplification in VHF bands. Verify that the system design supports the required 28V supply voltage and thermal management for 220 W PEP output. Compare electrical characteristics with alternative SSB transistors if supply constraints exist.

Part Context

The MS1076 series belongs to a family of RF bipolar transistors intended for HF and VHF SSB applications. These devices are characterized by their robust construction and high power handling capabilities. They are typically used in linear amplifier stages where linearity and efficiency are critical for communication signal integrity.

Replacement Considerations

STMicroelectronics SD1407, SD1411, SD1487, and SD1730 are listed as similar parts for HF SSB applications. Cross-reference pinouts and electrical parameters carefully before substitution.