MS1076C

MS1076C

  • Description:RF POWER TRANSISTOR
  • Series:-

SKU:8641b5596797 Category: Brand:

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Product Detailed Parameters

  • Description:RF POWER TRANSISTOR
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Transistor Type:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Frequency - Transition:-
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  • Power - Max:-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Current - Collector (Ic) (Max):-
  • Operating Temperature:-
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MS1076C

Overview

The MS1076C is a 28-volt epitaxial NPN silicon planar transistor manufactured by Microsemi Corporation. Designed primarily for Single Sideband (SSB) and Very High Frequency (VHF) communications, the device operates at 30 MHz. It features gold metallization and an emitter ballasted die geometry to ensure maximum ruggedness and reliability. The component delivers a minimum output power of 220 W PEP and a minimum gain of 12 dB in a common emitter configuration.

Feature Summary

  • Gold metallization for enhanced performance
  • Emitter ballasted die geometry for ruggedness
  • Optimized for SSB and VHF applications

Applications

  • Single Sideband (SSB) communications
  • Very High Frequency (VHF) transmitters

Part Context

The MS1076C belongs to the MS1076 series of RF bipolar transistors. This family includes variants such as the MS1076, MS1001, MS1007, and MS1008. These components are engineered for high-power HF SSB applications, sharing similar design goals regarding ruggedness and frequency operation within the VHF band.

MS1076CMS1076C

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