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The MS1N6659R is a dual ultrafast power rectifier manufactured by Microchip Technology. It features a common anode configuration with a maximum repetitive reverse voltage of 200 V and an average forward current of 15 A per diode. The device utilizes a TO-254AA (TO-254-3) package for through-hole mounting. Key electrical specifications include a maximum reverse leakage current of 10 µA at 200 V, a forward voltage of 1 V at 10 A, and a fast reverse recovery time of 35 ns.
Verify the specific suffix 'R' against official Microchip documentation to confirm tape-and-reel packaging requirements. Ensure the TO-254AA footprint matches the target PCB layout. Confirm RoHS compliance status directly with the manufacturer as datasheet records may vary. Validate that the 200V rating meets the peak inverse voltage requirements of the intended circuit application.
Select this component when a dual common anode configuration is required for synchronous rectification or bridge applications. The 15 A current rating supports high-power density designs. The 35 ns reverse recovery time makes it suitable for frequencies exceeding standard recovery diode limits. Compare thermal resistance values against heatsinking capabilities to ensure junction temperature remains within safe operating areas during continuous operation.
This part belongs to the 1N6659 series of dual ultrafast power rectifiers from Microchip Technology. It serves as a high-performance alternative to standard recovery diodes in demanding power electronics environments. The series is designed to minimize switching losses and improve overall system efficiency in industrial and automotive power conversion systems.
Consult official cross-reference lists for direct equivalents. Verify pinout compatibility and thermal characteristics before substituting with generic ultrafast diodes.