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The MSC010SDA070BCT is a silicon carbide (SiC) power Schottky barrier diode manufactured by Microchip Technology. It features a dual common cathode configuration housed in a three-lead TO-247 package. The device supports a maximum DC reverse voltage of 700 V and a repetitive peak forward surge current of 34 A. At a case temperature of 25 °C, the maximum DC forward current rating is 24 A. The junction-to-case thermal resistance is specified between 1.30 and 1.80 °C/W. Operating temperatures range from -55 °C to +175 °C.
Verify the specific ordering suffix against official Microchip documentation to confirm package type and electrical ratings. Confirm RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Ensure that application requirements align with the absolute maximum ratings provided in the datasheet.
Select this component for high-voltage applications requiring low switching losses and high reliability. Evaluate thermal management capabilities based on the junction-to-case thermal resistance and maximum power dissipation limits at expected operating temperatures. Consider the avalanche energy rating for circuits subject to transient overvoltages.
This device belongs to the Microchip SiC power Schottky barrier diode product line. These components are designed to increase performance over traditional silicon diode solutions while lowering total cost of ownership for high-voltage applications. The dual common cathode design allows for efficient integration into bridgeless PFC and other multi-phase topologies.
Consult official Microchip documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout, electrical parameters, and thermal characteristics.
The maximum DC forward current rating is 24 A at a case temperature of 25 °C.
Yes, the device exhibits no reverse recovery time, which enables high switching frequency operation with low switching losses.
The single-pulse avalanche energy rating is 100 mJ, measured starting at a junction temperature of 25 °C with a peak load current of 10 A.