Single FETs, MOSFETs MSC020SMB120SDT/R product image

MSC020SMB120SDT/R

  • Description:MOSFET SIC 1200 V 20 MOHM, 7LD T
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)

SKU:5975f22b5814 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

MSC020SMB120SDT/R is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET SIC 1200 V 20 MOHM, 7LD T. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for MSC020SMB120SDT/R

  • Description:MOSFET SIC 1200 V 20 MOHM, 7LD T
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

Single FETs, MOSFETs datasheet and documents for MSC020SMB120SDT/R

MSC020SMB120SDT/R

Single FETs, MOSFETs Overview

The MSC020SMB120SDT/R is a silicon carbide (SiC) MOSFET manufactured by Microchip Technology. It features a 1200 V drain-source voltage rating and a typical on-resistance of 20 mΩ. The device utilizes the QDPAK surface-mount package and is supplied in a full reel configuration for automated assembly processes.

Single FETs, MOSFETs Feature Summary

  • Utilizes silicon carbide semiconductor technology for superior thermal conductivity and high-temperature operation capabilities compared to traditional silicon devices.
  • Designed with low switching losses and zero reverse recovery charge characteristics to enhance system efficiency and reduce electromagnetic interference.

Single FETs, MOSFETs Applications

  • High-efficiency power conversion systems requiring compact form factors
  • Industrial motor drives and inverters demanding fast switching speeds
  • Automotive power electronics and onboard chargers

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and tape-and-reel quantity requirements directly with the manufacturer or authorized distributors before placing orders. Confirm that the component meets all necessary regulatory standards for your target market, as availability may vary by region.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits that require high-voltage handling with minimal conduction losses. Ensure the PCB layout supports the thermal dissipation needs of the QDPAK package and that the gate drive circuitry is compatible with SiC MOSFET switching characteristics.

Single FETs, MOSFETs Part Context

This part belongs to Microchip's portfolio of silicon carbide power semiconductors. These components are engineered to replace traditional silicon MOSFETs in applications where higher operating temperatures and faster switching frequencies are critical for reducing overall system size and weight.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip documentation for verified substitute part numbers within the same product family. Do not assume pin compatibility or electrical equivalence with other manufacturers' devices without rigorous validation against the datasheet specifications.

MSC020SMB120SDT/RMSC020SMB120SDT/R

Click on the inquiry