MSC030SDA170B

Single Diodes Overview

The MSC030SDA170B is a silicon carbide (SiC) Schottky barrier diode manufactured by Microchip Technology. It features a single configuration housed in a TO-247-2 through-hole package. The device supports a maximum repetitive reverse voltage of 1.7 kV and conducts a continuous forward current of 30 A. Key electrical parameters include a forward voltage of 1.5 V, a peak non-repetitive forward surge current of 353 A, and a reverse leakage current of 200 uA. It operates within a temperature range of -55 C to +175 C with a power dissipation rating of 429 W.

Single Diodes Feature Summary

• Utilizes silicon carbide semiconductor material for high-temperature stability
• Features a unipolar Schottky structure to minimize switching losses
• Designed for robust performance under high-voltage stress conditions

Single Diodes Applications

• High-frequency power conversion circuits
• Industrial motor drive systems
• Uninterruptible power supply units

Single Diodes Procurement Notes

Verify the specific ordering suffix and package variant against official Microchip documentation before procurement. Confirm that the component meets required RoHS compliance standards for the target application region. Ensure thermal management solutions align with the specified power dissipation limits to maintain safe operating temperatures during continuous operation.

Single Diodes Selection Notes

Select this component for designs requiring high blocking voltage and low reverse recovery charge. Evaluate thermal resistance characteristics to ensure adequate heat sinking for the TO-247-2 package. Compare forward voltage specifications against system efficiency targets to optimize conduction losses in high-current applications.

Single Diodes Part Context

This part belongs to the Microchip silicon carbide diode portfolio, engineered for next-generation power electronics. It complements other wide-bandgap devices by offering superior thermal conductivity and breakdown voltage capabilities compared to traditional silicon alternatives.