MSC080SMA120SDT/R

Single FETs, MOSFETs Overview

The MSC080SMA120SDT/R is a Silicon Carbide (SiC) N-Channel MOSFET from Microchip Technology, housed in a TO-263-7L XL package with a source sense pin. It features a drain-source voltage of 1200 V and a continuous drain current of 43 A at 25 °C case temperature. The device exhibits a typical on-resistance of 80 mΩ at VGS = 20V and 90 mΩ at VGS = 18V. Total gate charge is 64 nC, with turn-on and turn-off switching energies of 469 µJ and 51 µJ respectively under standard test conditions.

Single FETs, MOSFETs Feature Summary

• Low capacitances and low gate charge for efficient operation
• Fast switching speed enabled by low internal gate resistance
• Stable operation at high junction temperatures up to 175 °C
• Superior avalanche ruggedness and fast reliable body diode

Single FETs, MOSFETs Applications

• Photovoltaic inverters and converters
• Industrial motor drives
• Hybrid Electric Vehicle powertrains
• Electric Vehicle chargers
• Smart grid transmission and distribution systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm RoHS compliance status directly with the manufacturer or authorized distributor. Ensure the component matches the required thermal and electrical specifications for your application before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high efficiency and compact system design due to its low switching losses. Consider the 175 °C maximum junction temperature rating for high-temperature environments. Evaluate the need for a source sense pin if precise current monitoring is required in the circuit design.

Single FETs, MOSFETs Part Context

This part belongs to Microchip's mSiC™ MOSFET family, designed to replace silicon IGBTs in high-voltage applications. It offers improved thermal capabilities and lower switching losses compared to traditional silicon devices. The TO-263-7L XL package facilitates surface mount assembly with enhanced thermal dissipation through the backside tab.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 1200 V rating, TO-263-7L XL package, and similar RDS(on) characteristics. Verify pinout compatibility, especially regarding the source sense pin configuration. Check that the substitute device meets the same thermal and switching performance requirements.