MSC2X31SDA120J

MSC2X31SDA120J

$39.67
  • Description:DIODE MOD SIC 1200V 30A SOT227
  • Series:-

SKU:b2aeb39555cd Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MOD SIC 1200V 30A SOT227
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tube
  • Diode Configuration:2 Independent
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io) (per Diode):30A
  • Voltage - Forward (Vf) (Max) @ If:1.8 V @ 30 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:200 µA @ 1200 V
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227 (ISOTOP®)
  • Grade:-
  • Qualification:-

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MSC2X31SDA120J

Overview

The MSC2X31SDA120J is a dual parallel Silicon Carbide Schottky Barrier Diode manufactured by Microchip Technology. It features a maximum DC reverse voltage of 1200 V and a maximum DC forward current of 30 A at 100 °C. The device utilizes an isolated SOT-227 package with screw mounting, providing an isolation voltage of 2500 V RMS. Key electrical characteristics include a typical forward voltage of 1.5 V at 30 A and a junction-to-case thermal resistance of 0.60 °C/W. Operating temperatures range from -55 °C to +175 °C.

Feature Summary

  • Dual parallel configuration for high-current applications
  • Isolated package enabling direct heatsink mounting
  • Avalanche-energy rated capability
  • Zero reverse recovery time

Applications

  • Power factor correction (PFC)
  • Anti-parallel diode in switch-mode power supplies
  • Freewheeling diode in inverters and converters
  • Snubber or clamp diode circuits

Procurement Notes

Verify the specific suffix J against the official datasheet to confirm the parallel configuration variant. Ensure the procurement documentation references the correct Microsemi/Microchip part number MSC2X31SDA120J. Confirm RoHS compliance status through the manufacturer's latest environmental declaration. Validate that the received components match the SOT-227 package outline and terminal markings specified in the product data sheet.

Selection Notes

Select this component when a dual parallel SiC Schottky diode is required for high-voltage, high-frequency power conversion. The isolated SOT-227 package facilitates efficient thermal management via direct heatsink attachment. Consider the 1200 V rating and 30 A current capacity for industrial motor drives and power supplies. The low forward voltage and zero reverse recovery contribute to reduced switching losses and improved system efficiency.

Part Context

This device belongs to the MSC2X31/30SDA120J series of Silicon Carbide Schottky Barrier Diodes. It is designed to outperform traditional silicon diode solutions in high-voltage applications. The series includes both parallel (MSC2X31) and anti-parallel (MSC2X30) configurations within the same SOT-227 footprint, offering design flexibility for various power electronics topologies.

Replacement Considerations

The MSC2X30SDA120J is the documented anti-parallel alternative within the same series. Verify pinout compatibility and thermal requirements when substituting between parallel and anti-parallel variants. No other cross-model substitutes are confirmed in the provided documentation.

MSC2X31SDA120JMSC2X31SDA120J
$39.67
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