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The Microsemi MSCD36-08 is a glass passivated rectifier diode module featuring a single pair of common cathodes. It provides a maximum repetitive reverse voltage (VRRM) of 800 V and supports an average forward current (IFAV) of 36 A under half-wave 180-degree conduction conditions at a case temperature of 104°C. The device exhibits a typical forward voltage drop of 1.25 V at 100 A and a maximum non-repetitive surge current of 650 A for 10 ms. Thermal resistance from junction to case is 1.0 °C/W per diode, with an isolation voltage rating of 3000 Vrms.
Verify the specific suffix against official documentation to confirm voltage ratings and screening levels. Confirm thermal interface requirements match the specified mounting torque values for terminals and heatsinks. Check for updated compliance status as product lifecycles may change. Ensure application conditions align with the defined derating curves for accurate performance prediction.
Select this module when high blocking voltage and moderate current capacity are required in a compact footprint. Consider the thermal resistance characteristics for heatsink design. Evaluate the surge current capability against potential transient events in the circuit. Verify that the operating temperature range meets the environmental demands of the intended installation.
This component belongs to the MSKD36, MSAD36, and MSCD36 series of glass passivated rectifier diode modules. These devices share similar electrical characteristics but differ in voltage ratings and specific screening options. The series is designed for robust power conversion applications requiring reliable rectification in industrial environments.
Consult official substitution guides for compatible alternatives within the same series or equivalent products from other manufacturers. Ensure replacement parts meet or exceed the original voltage, current, and thermal specifications.
The module has an isolation voltage rating of 3000 Vrms at 50 Hz for one minute.
The typical forward voltage is 1.18 V at 100 A, with a maximum of 1.25 V under the same conditions at 25°C.
The thermal resistance from junction to case is 1.0 °C/W per diode.