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The MSCD70-08 is a glass passivated rectifier diode module manufactured by Microsemi Corporation. It features a maximum repetitive reverse voltage (VRRM) of 800 V and an average forward current (IFAV) rating of 70 A under single-phase half-wave conduction conditions at a case temperature of 102°C. The device supports a non-repetitive peak surge current (IFSM) of 1400 A for 10 ms. Electrical characteristics include a typical forward voltage drop of 1.20 V to 1.48 V at 200 A and a maximum reverse leakage current of 5 mA at 150°C. Thermal resistance from junction to case is 0.51 °C/W per diode, with an isolation voltage of 3000 Vrms.
Verify the specific part number suffix against official Microsemi documentation to confirm exact electrical ratings and package variations. Confirm compliance requirements such as UL approval status and RoHS directives prior to integration. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values for reliable operation within the stated temperature range.
Select this component based on its 800 V blocking voltage and 70 A continuous current capabilities. Consider the thermal resistance parameters when designing heatsinking systems. Verify that the application environment stays within the specified operating temperature limits and that mechanical mounting torque specifications are strictly followed to ensure proper electrical contact and thermal performance.
This module belongs to the MSKD70, MSAD70, and MSCD70 series of glass passivated rectifier diode modules. These components are designed for high-power applications requiring robust isolation and thermal performance. The series offers various voltage ratings ranging from 800 V to 1800 V, allowing engineers to select appropriate devices for different system voltage levels while maintaining consistent current handling and physical form factors.
Consult official Microsemi documentation for verified substitute part numbers within the same product family or equivalent offerings from other manufacturers. Ensure any replacement matches the critical electrical ratings, thermal characteristics, and mechanical dimensions required for the specific application.
The module provides an isolation voltage of 3000 Vrms at 50 Hz for one minute.
The thermal resistance from junction to case is 0.51 °C/W per diode.
The device can withstand a non-repetitive forward surge current of 1400 A for 10 ms at a junction temperature of 45°C.