MSCDC300A120AG

MSCDC300A120AG

$337.13
  • Description:DIODE MODULE SIC 1200V 300A SP6
  • Series:-

SKU:46bcc1baa299 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MODULE SIC 1200V 300A SP6
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tube
  • Diode Configuration:1 Pair Series Connection
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io) (per Diode):300A
  • Voltage - Forward (Vf) (Max) @ If:1.8 V @ 300 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:1.2 mA @ 1200 V
  • Operating Temperature - Junction:-40°C ~ 175°C
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:SP6
  • Grade:-
  • Qualification:-

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MSCDC300A120AG

Overview

The MSCDC300A120AG is a Silicon Carbide Schottky Barrier Diode module manufactured by Microchip Technology. It features a dual phase leg configuration within the SP6C package, designed for screw mounting. The device supports a reverse voltage of 1.2 kV and a forward current of 300 A. Its forward voltage is specified at 1.5 V, with an operating temperature range from -40°C to +125°C.

Feature Summary

  • Utilizes Silicon Carbide (SiC) technology for high-temperature operation
  • Provides zero reverse recovery charge characteristics inherent to Schottky diodes
  • Offers low thermal resistance and high reliability in power conversion applications

Applications

  • High-efficiency motor drives
  • Industrial power supplies
  • Uninterruptible power systems

Procurement Notes

Verify the specific datasheet revision and product change notifications prior to finalizing designs. Confirm that the SP6C package dimensions and terminal configurations match the target mechanical layout. Ensure thermal management solutions accommodate the specified maximum junction temperature limits during continuous operation.

Selection Notes

Select this component when designing circuits requiring high blocking voltage and significant current handling capabilities. The SiC material enables superior performance compared to silicon alternatives in high-frequency switching environments. Evaluate thermal dissipation requirements carefully given the high forward current rating.

Part Context

This module belongs to Microchip's series of high-voltage SiC Schottky diode modules. These components are engineered to replace traditional silicon fast-recovery diodes in demanding power electronics applications. The SP6C packaging provides a standardized form factor for easy integration into existing industrial power architectures.

Replacement Considerations

  • MSCDC300A70AG
  • MSCDC300A170AG

MSCDC300A120AGMSCDC300A120AG
$337.13
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