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Product Detailed Parameters
- Description：PM-IGBT-SBD-BL2
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：-
- Configuration：Full Bridge
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：110 A
- Power - Max：375 W
- Current - Collector Cutoff (Max)：25 µA
- Input Capacitance (Cies) @ Vce：2.77 nF @ 25 V
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Overview
The MSCGLQ50H120CTBL2NG is a full bridge high-speed IGBT4 power module rated at 1200 V and 50 A. It integrates SiC Schottky diodes with zero reverse recovery and low forward voltage. Key electrical parameters include a collector-emitter saturation voltage of 2.05 V (typical) at 50 A, a continuous collector current of 50 A at TH = 100 °C, and a maximum junction temperature of 175 °C. The module features an internal NTC thermistor with 50 kΩ resistance at 25 °C, a junction-to-heatsink thermal resistance of 0.4 °C/W for the IGBT, and operates within a storage case temperature range of -55 °C to 125 °C.
Feature Summary
- High speed IGBT4 technology providing low voltage drop and low switching losses
- SiC Schottky Diode integration ensuring zero reverse recovery and positive temperature coefficient on forward voltage
- Kelvin emitter configuration designed for easy gate drive implementation
- Internal thermistor included for precise temperature monitoring
Applications
- High reliability power systems
- High efficiency AC/DC and DC/AC converters
- Motor control applications
Procurement Notes
Verify component authenticity by cross-referencing the part number against official Microchip Technology documentation. Confirm that the datasheet revision matches the supplied device specifications. Ensure handling procedures account for electrostatic discharge sensitivity during installation and storage.
Selection Notes
Select this module for designs requiring high-frequency operation and low thermal resistance. Evaluate the 1200 V rating against system bus voltages and ensure the 50 A continuous current capability meets load requirements at the intended operating temperature. Verify heatsink compatibility with the specified mounting torque.
Part Context
This component belongs to the GLQ series of high-speed IGBT4 power modules manufactured by Microchip Technology. It utilizes silicon nitride substrates with thick copper layers to enhance thermal performance compared to standard ceramic alternatives.
Replacement Considerations
Consult official Microchip documentation for confirmed substitute part numbers. Do not assume functional equivalence with other full bridge modules without verifying pinout, voltage ratings, and thermal characteristics.
