MSCMC120AM02CT6LIAG

FET, MOSFET Arrays Overview

The MSCMC120AM02CT6LIAG is a silicon carbide (SiC) MOSFET power module manufactured by Microchip Technology. It features a two-element N-channel configuration housed in an SP6C LI package designed for baseplate mounting. The device supports a drain-source voltage of 1200V and delivers a continuous drain current of 742A at case temperature. Maximum power dissipation reaches 3200W, with a maximum on-resistance of 2.85 milliohms at 600A and 20V gate-source voltage. Operating junction temperature ranges from -40°C to 175°C.

FET, MOSFET Arrays Feature Summary

• Utilizes silicon carbide technology for high-temperature stability and low switching losses compared to silicon alternatives.
• Incorporates a low-inductance SP6C LI module design to minimize stray inductance during high-speed switching operations.
• Integrates N-channel MOSFETs optimized for phase-leg configurations in high-power conversion systems.

FET, MOSFET Arrays Applications

• High-efficiency industrial motor drives
• Uninterruptible power supply (UPS) systems
• Solar photovoltaic inverters

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix LIAG against official Microchip documentation to confirm pinout compatibility and thermal interface specifications. Ensure that the ordering information matches the exact SP6C LI package variant required for your mechanical assembly. Cross-reference datasheet revision levels to confirm electrical parameters remain consistent with your design requirements before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component when designing systems requiring high current density and robust thermal performance in a compact footprint. The 1200V rating suits medium-voltage applications, while the 742A current capability supports heavy-duty loads. Evaluate the 2.85 milliohm on-resistance impact on conduction losses relative to your specific duty cycle and cooling strategy to ensure optimal efficiency.

FET, MOSFET Arrays Part Context

This module belongs to Microchip's discrete semiconductor portfolio, specifically within the silicon carbide MOSFET category. It represents a transition toward higher power density solutions replacing traditional silicon IGBTs in demanding environments. The SP6C LI packaging family is engineered for screw-mount installation, facilitating direct attachment to cold plates or heatsinks for efficient thermal management in industrial power electronics.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing driver circuits and thermal interfaces if considering alternative SiC modules from other manufacturers due to potential differences in gate threshold voltages and package dimensions.