FET, MOSFET Arrays MSCSM120AM50CT1AG product image

MSCSM120AM50CT1AG

$76.30
  • Description:MOSFET 2N-CH 1200V 55A SP1F
  • Series:-

SKU:e3b7fe32d0a5 Category: Brand:

  
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MSCSM120AM50CT1AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1200V 55A SP1F. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120AM50CT1AG

  • Description:MOSFET 2N-CH 1200V 55A SP1F
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tube
  • Technology:Silicon Carbide (SiC)
  • Configuration:2 N Channel (Phase Leg)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:55A (Tc)
  • Rds On (Max) @ Id, Vgs:50mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id:2.7V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:137nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds:1990pF @ 1000V
  • Power - Max:245W (Tc)
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:SP1F
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MSCSM120AM50CT1AG

MSCSM120AM50CT1AG

FET, MOSFET Arrays Overview

The Microchip Technology MSCSM120AM50CT1AG is a Silicon Carbide (SiC) MOSFET and SiC Schottky Barrier Diode (SBD) discrete semiconductor module. It features an N-Channel configuration housed in the SP1F screw-mount package. Key electrical parameters include a drain-source breakdown voltage of 1.2 kV, a continuous drain current of 55 A, and a maximum on-resistance of 50 mOhms. The device operates within a temperature range of -40°C to +125°C, with a power dissipation rating of 245 W.

FET, MOSFET Arrays Feature Summary

  • Integrates a SiC MOSFET and SiC SBD for high-efficiency switching applications
  • Utilizes low-inductance SP1F packaging for improved thermal performance
  • Supports high-temperature operation up to 125°C junction temperature

FET, MOSFET Arrays Applications

  • High-frequency power conversion systems
  • Industrial motor drives
  • Uninterruptible power supplies (UPS)

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'CT1AG' against official Microchip documentation to confirm exact manufacturing lot details and compliance status. Ensure that the SP1F package dimensions match the target PCB footprint and mounting hardware requirements before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a single-phase leg configuration with integrated freewheeling diode is required. The 50 mOhm on-resistance offers a balance between conduction losses and switching speed. Consider the 55 A current rating relative to the expected thermal management capabilities of the heat sink assembly.

FET, MOSFET Arrays Part Context

This module belongs to the Microchip MSCSM120 series of Silicon Carbide power modules. These components are designed to replace traditional silicon-based solutions in high-voltage applications, offering superior thermal conductivity and faster switching speeds compared to conventional IGBT or Si MOSFET alternatives.

FET, MOSFET Arrays Replacement Considerations

Direct pin-to-pin replacements may not be available due to unique SP1F packaging. Evaluate alternative Microchip models such as MSCSM120AM31CT1AG for higher current ratings or MSCSM120XM50CTYZBNMG for three-phase bridge configurations if system architecture allows.

MSCSM120AM50CT1AGMSCSM120AM50CT1AG
$76.30
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