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MSCSM120AM50CT1AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1200V 55A SP1F. Review the specifications below when checking this part for your BOM.
The Microchip Technology MSCSM120AM50CT1AG is a Silicon Carbide (SiC) MOSFET and SiC Schottky Barrier Diode (SBD) discrete semiconductor module. It features an N-Channel configuration housed in the SP1F screw-mount package. Key electrical parameters include a drain-source breakdown voltage of 1.2 kV, a continuous drain current of 55 A, and a maximum on-resistance of 50 mOhms. The device operates within a temperature range of -40°C to +125°C, with a power dissipation rating of 245 W.
Verify the specific suffix 'CT1AG' against official Microchip documentation to confirm exact manufacturing lot details and compliance status. Ensure that the SP1F package dimensions match the target PCB footprint and mounting hardware requirements before finalizing procurement orders.
Select this component when a single-phase leg configuration with integrated freewheeling diode is required. The 50 mOhm on-resistance offers a balance between conduction losses and switching speed. Consider the 55 A current rating relative to the expected thermal management capabilities of the heat sink assembly.
This module belongs to the Microchip MSCSM120 series of Silicon Carbide power modules. These components are designed to replace traditional silicon-based solutions in high-voltage applications, offering superior thermal conductivity and faster switching speeds compared to conventional IGBT or Si MOSFET alternatives.
Direct pin-to-pin replacements may not be available due to unique SP1F packaging. Evaluate alternative Microchip models such as MSCSM120AM31CT1AG for higher current ratings or MSCSM120XM50CTYZBNMG for three-phase bridge configurations if system architecture allows.
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