MSCSM120HRM08NG

FET, MOSFET Arrays Overview

The MSCSM120HRM08NG is a T-type Silicon Carbide (SiC) MOSFET power module featuring a phase leg rated at 1200V and 317A, alongside dual common source switches rated at 700V and 227A. The 1200V devices exhibit a maximum on-resistance of 7.8 mΩ and a total gate charge of 928 nC. The 700V devices provide a maximum on-resistance of 9.5 mΩ with a total gate charge of 430 nC. The module utilizes an Si3N4 substrate for thermal management and supports junction temperatures up to 175°C.

FET, MOSFET Arrays Feature Summary

• T-type topology integrating high-voltage phase legs with lower-voltage dual common source switches
• Kelvin source connection design to facilitate low-inductance gate drive implementation
• Silicon nitride (Si3N4) ceramic substrate engineered for enhanced thermal conductivity and performance

FET, MOSFET Arrays Applications

• Solar inverters
• Three-level inverters
• Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision (DS00004935A) against your design requirements before procurement. Confirm that the M5 power connector specifications align with your system's busbar or terminal interface. Ensure electrostatic discharge handling protocols are strictly followed during installation due to component sensitivity.

FET, MOSFET Arrays Selection Notes

Select this module when a hybrid voltage architecture is required within a single package. It combines 1200V capability for main switching with 700V options for auxiliary functions. Evaluate the thermal impedance curves to ensure adequate heatsinking for the intended operating frequency and current load.

FET, MOSFET Arrays Part Context

This device belongs to Microchip's T-Type SiC MOSFET Power Module family. It is designed to replace discrete solutions by providing integrated switching capabilities in a compact form factor. The module simplifies layout by reducing stray inductance through its internal construction.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the documentation.

FET, MOSFET Arrays FAQ

What is the isolation voltage rating of the module?

The RMS isolation voltage from any terminal to the case is rated at 4000 V.

How does the Kelvin source improve operation?

The dedicated Kelvin source pin allows for easy drive implementation by separating the gate drive return path from the high-current source path, minimizing noise interference.

What is the recommended junction temperature range?

The recommended junction temperature under switching conditions ranges from -40°C to TJmax-25°C, while the absolute operating range extends to 175°C.