MSCSM120TLM16C3AG

FET, MOSFET Arrays Overview

The MSCSM120TLM16C3AG is a Silicon Carbide (SiC) MOSFET module manufactured by Microchip Technology, designed for high-power applications. It features an N-Channel configuration with a drain-source voltage of 1200V and a continuous drain current of 173A at case temperature. The device exhibits a maximum on-resistance of 16 mOhm at 80A and 20V gate drive. Key switching parameters include a typical turn-on delay of 56 ns, rise time of 30 ns, turn-off delay of 166 ns, and fall time of 67 ns. Total gate charge is 494 nC at 20V, with a threshold voltage of 2.8V max. Power dissipation reaches 745W, operating within a junction temperature range of -40°C to 175°C.

FET, MOSFET Arrays Feature Summary

• Utilizes Silicon Carbide technology for superior thermal performance and high-temperature operation up to 175°C junction temperature.
• Configured as a three-level inverter module, integrating multiple N-channel devices for complex power conversion topologies.
• Features low on-resistance and optimized switching characteristics to minimize conduction and switching losses in high-frequency applications.

FET, MOSFET Arrays Applications

• Three-level neutral-point-clamped (NPC) inverters
• High-efficiency motor drives and traction systems
• Industrial power supplies and DC-DC converters

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix and package variant against the official Microchip datasheet to ensure compatibility with your design requirements. Confirm that the requested component matches the exact part number MSCSM120TLM16C3AG, as minor variations in suffixes can indicate different internal configurations or testing standards. Cross-reference the manufacturer's latest documentation for any product change notifications or updates regarding pinout and thermal specifications before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this module when designing circuits requiring high voltage blocking capability combined with low on-state resistance for efficiency. The three-level inverter configuration makes it suitable for applications demanding reduced voltage stress on individual switches. Ensure the gate driver can support the specified 20V gate drive voltage and handle the total gate charge of 494 nC efficiently. Verify that the thermal management system can dissipate up to 745W of power while maintaining the junction temperature within the specified operational limits.

FET, MOSFET Arrays Part Context

This component belongs to the MSCSM120 series of discrete semiconductor modules from Microchip Technology. It is part of their portfolio of Silicon Carbide solutions aimed at improving power density and efficiency. The SP3F package provides a robust mechanical interface for screw mounting, facilitating integration into larger power assemblies. This series represents Microchip's focus on advanced wide-bandgap semiconductor technologies for demanding industrial and automotive applications.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes may include other Microchip SiC modules with similar voltage and current ratings, such as those in the MSCSM120 family with compatible packaging. Verify electrical parameters like Rds(on), Vgs(th), and switching times against the original specification. Ensure the replacement part supports the same three-level inverter topology and thermal dissipation requirements. Consult Microchip's official cross-reference tools for validated alternatives.

FET, MOSFET Arrays FAQ

What is the maximum junction temperature for the MSCSM120TLM16C3AG?

The maximum operating junction temperature is 175°C.

Does this module support three-level inverter topologies?

Yes, the MSCSM120TLM16C3AG is specifically configured for three-level inverter applications.

What is the typical total gate charge at 20V?

The typical total gate charge is 494 nC when driven at 20V.