MSCSM120VR1M31C1AG

$137.39

Description：MOSFET 2N-CH 1200V 89A
Series：-

SKU:20348754a4a4 Category: FET, MOSFET Arrays Brand: Microchip Technology

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

MSCSM120VR1M31C1AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1200V 89A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120VR1M31C1AG

Description：MOSFET 2N-CH 1200V 89A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：2 N Channel (Phase Leg)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：89A (Tc)
Rds On (Max) @ Id, Vgs：31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id：2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs：232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：3020pF @ 1000V
Power - Max：395W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM120VR1M31C1AG

MSCSM120VR1M31C1AG

FET, MOSFET Arrays Overview

The MSCSM120VR1M31C1AG is a Vienna rectifier silicon carbide (SiC) power module manufactured by Microchip Technology. It integrates SiC MOSFETs and Schottky diodes within an isolated package designed for high-frequency operation. The device features a 1200V drain-source voltage rating and supports continuous currents up to 89A at 25°C case temperature. Key electrical parameters include a maximum RDS(on) of 31 mΩ, a junction-to-case thermal resistance of 0.38 °C/W for the MOSFET, and a reverse recovery time of 90 ns for the body diode. The module utilizes an Aluminum Nitride substrate and includes Kelvin source connections.

FET, MOSFET Arrays Feature Summary

Integrated Silicon Carbide MOSFETs and Schottky Diodes
Kelvin source connection for optimized gate drive
Aluminum Nitride substrate for enhanced thermal management
Very low stray inductance design

FET, MOSFET Arrays Applications

Power factor correction
Switched mode power supplies
Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized Microchip distributors or official sales channels. Confirm datasheet revision A (08/2022) matches your requirements. Ensure electrostatic discharge handling procedures are strictly followed during storage and assembly. Cross-reference pin shorting requirements for pins 1/2, 4/5, 7/8, and 9/10 before PCB integration.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high-efficiency rectification and high-frequency switching capabilities. Evaluate thermal management solutions based on the specified junction-to-case thermal resistance. Consider the 1200V rating and current capacity relative to system load requirements. Verify compatibility with control circuitry due to specific gate voltage thresholds and drive requirements.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's silicon carbide power module portfolio, specifically engineered for Vienna rectifier topologies. It represents a shift towards wide-bandgap semiconductor technology to improve power density and efficiency in industrial power conversion systems compared to traditional silicon-based alternatives.