MSCSM170AM11CT3AG

FET, MOSFET Arrays Overview

The MSCSM170AM11CT3AG is a phase leg silicon carbide (SiC) MOSFET power module rated at 1700 V and 240 A. It features an internal NTC thermistor for temperature monitoring and utilizes an Aluminum Nitride substrate for improved thermal performance. The device incorporates Kelvin source connections to facilitate easy gate drive implementation. Key electrical parameters include a drain-source on-resistance of 11.3 mΩ, a continuous drain current of 191 A at 80 °C case temperature, and a maximum junction temperature of 175 °C.

FET, MOSFET Arrays Feature Summary

• Integrated Kelvin source terminals for simplified driver connection
• Internal negative temperature coefficient thermistor for precise junction temperature monitoring
• Aluminum Nitride substrate providing enhanced thermal conductivity and low junction-to-case resistance
• Temperature-independent switching behavior with positive forward voltage temperature coefficient

FET, MOSFET Arrays Applications

• Induction heating systems
• Welding equipment
• Solar inverters
• Electric vehicle motor and traction drives

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package and terminal configuration. Confirm that all required pin shorting requirements are met during assembly. Ensure electrostatic discharge handling procedures are strictly followed during storage and installation to prevent device damage.

FET, MOSFET Arrays Selection Notes

Select this component for high-frequency applications requiring low switching losses and robust thermal management. Evaluate the 11.3 mΩ on-resistance against system conduction loss targets. Consider the 1700 V rating for high-voltage bus architectures. Verify compatibility with the SP3F mounting footprint and torque specifications.

FET, MOSFET Arrays Part Context

This device belongs to Microchip's AgileSwitch series of SiC power modules. It is designed for high-efficiency power conversion in demanding industrial and automotive environments. The module integrates both the SiC MOSFET and SiC Schottky diode within a single isolated package to minimize stray inductance and improve overall system reliability.

FET, MOSFET Arrays Replacement Considerations

Consult the official datasheet or manufacturer support channels for verified substitute part numbers. Do not assume cross-compatibility with other voltage ratings or current capacities without explicit confirmation from the manufacturer.