MSCSM170DUM11T3AG

$277.07

Description：MOSFET 2N-CH 1700V 240A SP3F
Series：-

SKU:278b91078b46 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM170DUM11T3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1700V 240A SP3F. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM170DUM11T3AG

Description：MOSFET 2N-CH 1700V 240A SP3F
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Dual) Common Source
FET Feature：-
Drain to Source Voltage (Vdss)：1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C：240A (Tc)
Rds On (Max) @ Id, Vgs：11.3mOhm @ 120A, 20V
Vgs(th) (Max) @ Id：3.2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：712nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：13200pF @ 1000V
Power - Max：1140W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：SP3F
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM170DUM11T3AG

MSCSM170DUM11T3AG

FET, MOSFET Arrays Overview

The MSCSM170DUM11T3AG is a dual common source silicon carbide (SiC) MOSFET power module rated at 1700V and 240A. It features an internal NTC thermistor for temperature monitoring and utilizes an aluminum nitride substrate for improved thermal performance. The device includes Kelvin sources for easy drive, low stray inductance, and solderable terminals for both power and signal connections.

FET, MOSFET Arrays Feature Summary

Kelvin source configuration for simplified gate drive
Internal NTC thermistor for precise temperature monitoring
Aluminum nitride substrate for enhanced thermal dissipation
Low stray inductance design for high-frequency operation

FET, MOSFET Arrays Applications

AC switches

FET, MOSFET Arrays Procurement Notes

Verify the datasheet revision date to ensure compatibility with current manufacturing standards. Confirm that handling procedures account for electrostatic discharge sensitivity. Check for any Product Change Notifications regarding material or process updates before finalizing procurement specifications.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high-voltage isolation and efficient thermal management. Ensure the heatsink mounting torque adheres to the specified range of 2 to 3 N.m for M4 screws. Verify that the operating junction temperature remains within the recommended switching conditions to maintain performance stability.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's SiC MOSFET power module family, designed for high-efficiency power conversion. It integrates advanced packaging technologies to support direct mounting to heatsinks while maintaining electrical isolation. The SP3F package standard facilitates robust mechanical integration into industrial power systems.