MSCSM170TLM11CAG

FET, MOSFET Arrays Overview

The MSCSM170TLM11CAG is a silicon carbide (SiC) MOSFET power module manufactured by Microchip Technology. It features a three-level inverter topology and utilizes the SP6C chassis mount package. The device supports a maximum drain-source voltage of 1700V and a continuous collector current of 238A at case temperature. Thermal dissipation capacity is rated at 1114W under specified conditions. The junction operating temperature range spans from -40°C to 175°C, ensuring robust performance in high-temperature environments.

FET, MOSFET Arrays Feature Summary

• Integrates Silicon Carbide MOSFET technology for enhanced thermal efficiency and switching speed
• Designed with a three-level inverter architecture to reduce harmonic distortion and electromagnetic interference
• Utilizes the SP6C chassis mount form factor for secure mechanical installation and optimized heat transfer

FET, MOSFET Arrays Applications

• Industrial motor drives and variable frequency drives
• High-power renewable energy inverters
• Uninterruptible power supply systems
• Electric vehicle charging infrastructure

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized Microchip Technology distributors or certified partners. Confirm that the received unit matches the exact part number MSCSM170TLM11CAG and includes appropriate documentation. Inspect the SP6C package for physical integrity before integration. Ensure handling procedures comply with electrostatic discharge protocols to prevent damage to the sensitive silicon carbide semiconductor structures during assembly.

FET, MOSFET Arrays Selection Notes

Select this module when system requirements demand high voltage blocking capabilities combined with efficient thermal management in compact designs. The three-level topology is suitable for applications requiring reduced switching losses and improved output waveform quality. Consider the 1700V rating for medium-voltage industrial networks. Evaluate the chassis mount requirement against available cooling solutions and mechanical constraints within the target enclosure design.

FET, MOSFET Arrays Part Context

This component belongs to Microchip Technology's discrete semiconductor modules category, specifically within the MOSFET-SiC SBD subcategory. It is part of the broader portfolio of silicon carbide power devices designed for high-efficiency energy conversion. The SP6C packaging standard provides a common interface for various power ratings within this family, facilitating modular system expansion and standardized thermal management strategies across different product lines.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match the 1700V rating, 238A current capacity, and SP6C chassis mount footprint. Verify pinout compatibility and thermal resistance characteristics before substitution. Cross-reference with other Microchip SiC modules in the same series for potential drop-in replacements that offer equivalent electrical performance and mechanical dimensions.