MSCSM70TLM44C3AG

FET, MOSFET Arrays Overview

The MSCSM70TLM44C3AG is a three-level inverter silicon carbide (SiC) MOSFET power module rated at 700V and 58A. It features an internal SiC Schottky diode with zero reverse recovery. Key electrical parameters include a drain-source on-resistance of 44 mΩ, a gate threshold voltage of 2.7 V, and a junction-to-case thermal resistance of 0.85 °C/W. The device operates within a junction temperature range of -40°C to 175°C and utilizes an Aluminum Nitride substrate for improved thermal performance.

FET, MOSFET Arrays Feature Summary

• Integrated SiC Schottky diode providing zero reverse and forward recovery characteristics
• Kelvin emitter configuration designed for simplified gate drive implementation
• Aluminum Nitride substrate utilized to enhance thermal dissipation capabilities
• Low stray inductance architecture supporting high-frequency switching operations

FET, MOSFET Arrays Applications

• Uninterruptible power supplies
• Three-level inverter systems
• High-efficiency power converters

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the official Microchip datasheet DS00004403A to ensure correct package and rating specifications. Confirm that the component meets RoHS compliance requirements prior to integration. Ensure proper electrostatic discharge handling procedures are followed during storage and assembly to prevent damage to the sensitive semiconductor structure.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high-temperature stability and low switching losses. The Kelvin emitter simplifies driver design by separating power and signal grounds. Evaluate the thermal resistance and operating case temperature limits to ensure adequate heatsinking. Consider the isolation voltage rating when designing the system layout for safety compliance.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's silicon carbide power module portfolio, specifically engineered for three-level inverter topologies. It integrates both N-channel MOSFETs and complementary Schottky diodes into a single isolated package. The SP1F/SP3F form factor allows direct mounting to heatsinks, facilitating compact designs in industrial and energy conversion equipment.

FET, MOSFET Arrays Replacement Considerations

Consult the official Microchip product selector or datasheet revision history for confirmed substitute part numbers. Do not assume cross-compatibility with other manufacturers' modules due to differences in pinout, thermal resistance, and electrical characteristics.