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Product Detailed Parameters
- Description：P Channel MOSFET,100V,TO-252
- Series：*
- Mfr：Bruckewell
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：50mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (D-Pak)
- Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
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Overview
The MSD100P50 is a P-Channel MOSFET utilizing trench DMOS technology, designed for high efficiency and fast switching. It features a Drain-Source Voltage (VDS) of -100 V and a continuous drain current (ID) of -30 A at 25°C. The device guarantees an on-resistance (RDS(on)) of 50 mΩ at VGS = -10 V and supports a pulsed drain current (IDM) of -100 A. Single pulse avalanche energy (EAS) is rated at 345 mJ with L=0.1mH. Operating junction temperature ranges from -55 to +150 °C, with thermal resistance RθJA at 62 °C/W.
Feature Summary
- Advanced trench DMOS technology minimizes on-resistance and enhances switching performance.
- Superior dv/dt capability ensures robust operation in high-speed environments.
- Guaranteed 100% single pulse avalanche energy testing for reliability.
- Optimized for high efficiency applications requiring fast switching.
Applications
- Motor Drive
- LED Lighting
- Hand-held Device
Procurement Notes
Verify the specific datasheet revision against the manufacturer's official documentation before implementation. Confirm that the TO-252 package dimensions align with your PCB footprint requirements. Ensure thermal management solutions account for the specified junction-to-ambient thermal resistance under your operating conditions. Validate that voltage and current ratings meet the peak demands of your circuit design.
Selection Notes
Select this component for applications requiring efficient power switching with moderate voltage handling capabilities. The low on-resistance contributes to reduced conduction losses, improving overall system efficiency. Consider the thermal characteristics when designing heat dissipation strategies, particularly for continuous high-current operations. Verify compatibility with gate drive voltages to ensure optimal threshold activation.
Part Context
This component belongs to the family of P-Channel MOSFETs manufactured by Bruckewell Technology Corporation. It utilizes trench DMOS technology to achieve superior switching performance and withstand high energy pulses. The device is specifically tailored for high-efficiency applications where fast switching and low on-resistance are critical parameters.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum single pulse avalanche energy rating?
The MSD100P50 has a single pulse avalanche energy rating of 345 mJ when tested with an inductance of 0.1 mH.
How does the on-resistance vary with temperature?
The normalized on-resistance increases as the junction temperature rises, as illustrated in the typical electrical characteristics graphs provided in the datasheet.
