MSD60N45

MSD60N45

$0.41
  • Description:N Channel MOSFET,60V,TO-252
  • Series:*
  • Mfr:Bruckewell
  • Package:Tape & Reel (TR)

SKU:4ce548b56259 Category: Brand:

  
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Product Detailed Parameters

  • Description:N Channel MOSFET,60V,TO-252
  • Series:*
  • Mfr:Bruckewell
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:12mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252 (D-Pak)
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

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MSD60N45

Overview

The Bruckewell MSD60N45 is an N-Channel MOSFET utilizing advanced Trench technology to deliver low on-resistance and gate charge. It features a drain-source voltage of 60V, a continuous drain current of 45A at 25°C case temperature, and a maximum power dissipation of 63W. The device includes a body diode with a forward voltage of 1.0V and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

  • Advanced Trench technology for excellent RDS(ON) performance
  • Low Miller Charge and low input capacitance
  • 100% EAS guaranteed reliability

Applications

  • Motor Drive
  • Power Tools
  • LED Lighting

Procurement Notes

Verify the specific datasheet revision (Rev. A -2020) matches your design requirements. Confirm that the TO-252 package dimensions align with your PCB footprint. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under your operating conditions.

Selection Notes

Select this component for general-purpose switching applications requiring robust avalanche energy handling. Consider the low gate charge for efficient PWM control. Evaluate the thermal constraints based on the 63W dissipation rating at 25°C case temperature versus ambient conditions.

Part Context

This part belongs to the Bruckewell Technology Corporation series of N-Channel MOSFETs. It is designed for high-efficiency switching in compact electronic systems. The TO-252 package facilitates surface-mount assembly, supporting automated manufacturing processes for consumer and industrial electronics.

Replacement Considerations

Consult official Bruckewell documentation or authorized distributors for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without validating electrical parameters and pin configurations against the original specifications.

FAQ

What is the maximum single pulse avalanche energy?

The maximum single pulse avalanche energy is 61 mJ when tested with L=0.1mH.

Is the device RoHS compliant?

Yes, the device meets RoHS and Green Product requirements.

MSD60N45MSD60N45
$0.41
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