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The Bruckewell MSD60N45 is an N-Channel MOSFET utilizing advanced Trench technology to deliver low on-resistance and gate charge. It features a drain-source voltage of 60V, a continuous drain current of 45A at 25°C case temperature, and a maximum power dissipation of 63W. The device includes a body diode with a forward voltage of 1.0V and operates within a junction temperature range of -55°C to +150°C.
Verify the specific datasheet revision (Rev. A -2020) matches your design requirements. Confirm that the TO-252 package dimensions align with your PCB footprint. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under your operating conditions.
Select this component for general-purpose switching applications requiring robust avalanche energy handling. Consider the low gate charge for efficient PWM control. Evaluate the thermal constraints based on the 63W dissipation rating at 25°C case temperature versus ambient conditions.
This part belongs to the Bruckewell Technology Corporation series of N-Channel MOSFETs. It is designed for high-efficiency switching in compact electronic systems. The TO-252 package facilitates surface-mount assembly, supporting automated manufacturing processes for consumer and industrial electronics.
Consult official Bruckewell documentation or authorized distributors for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without validating electrical parameters and pin configurations against the original specifications.
The maximum single pulse avalanche energy is 61 mJ when tested with L=0.1mH.
Yes, the device meets RoHS and Green Product requirements.