MSH40N065AU

$0.38

Description：N-Channel MOSFET,40V,DFN5x6
Series：*
Mfr：Bruckewell
Package：Tape & Reel (TR)

SKU:4efa341a47e4 Category: Single FETs, MOSFETs Brand: Bruckewell

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Product introduction

Product Detailed Parameters

Description：N-Channel MOSFET,40V,DFN5x6
Series：*
Mfr：Bruckewell
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DFN5060-8
Package / Case：8-PowerVDFN

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MSH40N065AU

Overview

The Bruckewell MSH40N065AU is an N-channel MOSFET utilizing trench DMOS technology, designed for high-efficiency fast switching applications. It features a 40V drain-source voltage rating and a maximum continuous drain current of 75A at 25°C case temperature. The device achieves a low static drain-source on-resistance of 6.5mΩ at VGS=10V. It supports a single pulse avalanche energy of up to 76mJ and operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Trench DMOS technology minimizes on-resistance and enhances switching performance
Guaranteed 100% single pulse avalanche energy testing for reliability
LFPAK56 package design with gull wing leads for improved board-level reliability
RoHS compliant and manufactured as a green product

Applications

MB / VGA / Vcore power stages
POL (Point-of-Load) applications
SMPS secondary rectification

Procurement Notes

Verify the specific manufacturer datasheet revision against the requested component. Confirm that the LFPAK56 package dimensions match the target PCB footprint. Ensure the electrical parameters align with the system's thermal and voltage requirements before finalizing procurement.

Selection Notes

Select this component for designs requiring low conduction losses and robust avalanche capability. Evaluate the thermal resistance ratings to ensure adequate heat dissipation in the intended application environment. Consider the gate charge characteristics when designing the driver circuitry for optimal switching efficiency.

Part Context

This part belongs to the Bruckewell Technology Corporation MOSFET portfolio. It is specifically engineered using advanced trench DMOS processes to deliver superior performance in demanding power conversion environments. The device is optimized for applications where high power density and fast switching speeds are critical.