MSH40P60AU

Overview

The MSH40P60AU is a P-Channel MOSFET utilizing trench DMOS technology, designed for high-efficiency fast switching applications. It features a -40V drain-source voltage rating and supports continuous drain currents of -60A at 25°C case temperature. The device guarantees an on-resistance of 13mΩ at VGS=-10V and 18mΩ at VGS=-4.5V. It withstands single-pulse avalanche energy up to 180mJ and operates within a junction temperature range of -55°C to +175°C.

Feature Summary

• Advanced trench DMOS technology minimizes on-resistance while providing superior switching performance.
• Capable of withstanding high energy pulses in both avalanche and commutation modes.
• Optimized for compatibility with -4.5V gate drive applications.
• Manufactured as a green device compliant with RoHS requirements.

Applications

• Motherboard (MB) power stages
• Video Graphics Array (VGA) circuits
• Processor core (Vcore) voltage regulation
• Point-of-load (POL) converters
• LED driver applications

Procurement Notes

Verify the specific revision level against the manufacturer's latest documentation before finalizing procurement. Confirm that the PDFN 5x6 package dimensions align with the target PCB footprint. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under actual operating conditions.

Selection Notes

Select this component when designing systems requiring robust avalanche energy handling and low conduction losses. The device is particularly suitable for applications demanding operation with lower gate drive voltages, such as -4.5V logic levels. Evaluate the thermal dissipation capabilities relative to the expected ambient temperatures and copper area available on the printed circuit board.

Part Context

This part belongs to Bruckewell Technology Corporation's discrete semiconductor lineup, specifically focusing on power management solutions. The company utilizes trench DMOS technology to produce devices tailored for high-performance switching environments. This product line emphasizes reliability through guaranteed avalanche energy testing and compliance with environmental standards.

Replacement Considerations

Cross-reference pinout configurations and absolute maximum ratings carefully when substituting similar P-Channel MOSFETs. Verify that alternative components meet or exceed the required -40V breakdown voltage and current carrying capacity. Ensure the replacement package matches the PDFN 5x6 form factor for direct board integration.

FAQ

What is the maximum single-pulse avalanche energy the device can handle?

The MSH40P60AU is rated for a maximum single-pulse avalanche energy of 180 mJ under test conditions of VDD = -25V, L = 0.1mH, and IAS = -60A.

Is the device compatible with -4.5V gate drive signals?

Yes, the datasheet explicitly states that the device is suitable for -4.5V gate drive applications, maintaining an on-resistance of 18mΩ under these conditions.

What packaging format is used for this component?

The MSH40P60AU is supplied in a surface-mounted PDFN 5x6 package, typically provided in reels of 3,000 units.