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Product Detailed Parameters
- Description：P-Channel MOSFET,40V,DFN5x6
- Series：*
- Mfr：Bruckewell
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：78A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DFN5060-8
- Package / Case：8-PowerVDFN
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Overview
The MSH40P78AU is a P-Channel MOSFET utilizing trench DMOS technology, designed for high efficiency and fast switching. It features a -40V drain-source voltage rating and a continuous drain current of -78A at 25°C. The device guarantees an on-resistance of 5.6mΩ at VGS=-10V and supports single pulse avalanche energy up to 180mJ. Packaged in a PDFN 5x6 format, it operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Utilizes advanced trench DMOS technology to minimize on-resistance and enhance switching performance.
- Capable of withstanding high energy pulses in both avalanche and commutation modes.
- Features improved dv/dt capability and guaranteed 100% EAS testing.
Applications
- Motor Drive
- LED Lighting
- Hand-held Device
Procurement Notes
Verify the specific revision status against the manufacturer's latest documentation before finalizing procurement. Confirm that the PDFN 5x6 package dimensions align with the target PCB footprint requirements. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under actual operating conditions.
Selection Notes
Select this component for applications requiring robust handling of inductive loads and high-speed switching operations. The low on-resistance makes it suitable for power-efficient designs where minimizing conduction losses is critical. Evaluate the thermal characteristics carefully to ensure the junction temperature remains within safe operational limits during peak load scenarios.
Part Context
This part belongs to the Bruckewell Technology Corporation lineup of power semiconductors. It represents a specialized solution for compact electronic systems needing reliable P-Channel MOSFET performance. The design focuses on balancing electrical stress tolerance with physical size constraints typical of modern portable and industrial electronics.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum single pulse avalanche energy supported by the MSH40P78AU?
The device supports a maximum single pulse avalanche energy of 180 mJ when tested with an inductance of 0.1mH.
How does the gate threshold voltage vary with temperature?
The datasheet provides a graph showing the normalized gate threshold voltage versus junction temperature, indicating a negative temperature coefficient typical for MOSFETs.
