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Product Detailed Parameters
- Description：P Channel MOSFET,30V,DFN3X3
- Series：*
- Mfr：Bruckewell
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：20mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DFN3333-8
- Package / Case：8-PowerVDFN
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Overview
The MSHM30P32 is a P-channel MOSFET featuring a maximum drain-source voltage of -30 V and a continuous drain current of -32 A at 25°C case temperature. It achieves a static on-resistance of 20 mΩ at VGS = -10 V and -15 A, with a gate charge of 12.5 nC. The device operates within a junction temperature range of -55 to +150 °C and provides single-pulse avalanche energy of 72.2 mJ.
Feature Summary
- High cell density trench technology for low on-resistance
- Super low gate charge for efficient switching
- Excellent CdV/dt effect decline
- Guaranteed 100% EAS reliability
Applications
- MB / VGA / Vcore power stages
- POL applications
- Load switch circuits
- LED driver applications
Procurement Notes
Verify the specific package marking and RoHS compliance status against the latest Bruckewell datasheet revision before procurement. Confirm thermal management requirements align with the specified RθJA and RθJC values for your PCB layout. Ensure that operating conditions remain within the absolute maximum ratings for VDS, VGS, and ID to maintain device integrity.
Selection Notes
Select this component for synchronous buck converter designs requiring high efficiency and compact form factors. Consider the PDFN 3.3x3.3 package dimensions for space-constrained layouts. Evaluate the thermal resistance characteristics against your system's heat dissipation capabilities to ensure stable operation under continuous load conditions.
Part Context
This part belongs to Bruckewell’s trench P-channel MOSFET series, designed for high-performance power switching. It utilizes advanced cell density to optimize conduction losses while maintaining robust switching performance. The device targets modern power management solutions where size and efficiency are critical constraints.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum single-pulse avalanche energy?
The MSHM30P32 supports a single-pulse avalanche energy of 72.2 mJ when tested at VDD = -25 V, L = 0.1 mH, and IAS = -38 A.
How does the on-resistance vary with temperature?
The normalized on-resistance increases as the junction temperature rises from -50 °C to +150 °C, as shown in the typical electrical characteristics graph.
