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MSJAC11N65Y-TP is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is MOSFET N-CH 650V 11A DFN5060. Review the specifications below when checking this part for your BOM.
The MSJAC11N65Y is an N-channel Super-Junction Power MOSFET from Micro Commercial Components, housed in a DFN5060 package. It features a drain-source voltage of 650V and a continuous drain current of 11A at TC=25°C. The device exhibits a typical on-resistance of 0.34Ω at VGS=10V. Key electrical parameters include a gate threshold voltage ranging from 2.5V to 4V, total gate charge of 21nC, and input capacitance of 901pF. Thermal resistance is specified at 1.6°C/W junction-to-case and 62°C/W junction-to-ambient. The operating junction temperature range spans from -55°C to +150°C.
Verify authenticity through authorized MCC distributors or direct purchase to avoid counterfeit components. Confirm the specific ordering suffix matches required packaging and compliance specifications. Ensure storage conditions adhere to moisture sensitivity level guidelines prior to soldering. Review the latest datasheet revision for any updates to maximum ratings or thermal characteristics before finalizing procurement orders.
Select this component for designs requiring 650V blocking capability with moderate current handling in a compact surface-mount footprint. Evaluate thermal management requirements against the 1.6°C/W junction-to-case resistance for your specific PCB layout. Consider the gate charge characteristics when designing drive circuits for optimal switching performance. Verify that the application voltage and current stresses remain within the absolute maximum ratings provided in the datasheet.
This device belongs to Micro Commercial Components' line of N-channel super-junction power MOSFETs. The DFN5060 package provides a small outline suitable for space-constrained designs while offering improved thermal performance compared to traditional packages. The super-junction architecture allows for lower on-resistance relative to conventional planar MOSFETs of similar voltage ratings.
No public confirmed substitute part numbers are documented in the source material.
The single pulse avalanche energy is 78mJ under test conditions of IAS=1.6A, VDD=50V, RG=25Ω, and starting TJ=25°C.
Yes, the device has a continuous body diode current rating of 9.2A and a reverse recovery time of 280ns at VR=520V and IF=IS.
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