Single FETs, MOSFETs MSJAC11N65Y-TP product image

MSJAC11N65Y-TP

  • Description:MOSFET N-CH 650V 11A DFN5060
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:e75de2de177a Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

MSJAC11N65Y-TP is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is MOSFET N-CH 650V 11A DFN5060. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for MSJAC11N65Y-TP

  • Description:MOSFET N-CH 650V 11A DFN5060
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:380mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:901 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):78W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:DFN5060
  • Package / Case:8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for MSJAC11N65Y-TP

MSJAC11N65Y-TP

Single FETs, MOSFETs Overview

The MSJAC11N65Y is an N-channel Super-Junction Power MOSFET from Micro Commercial Components, housed in a DFN5060 package. It features a drain-source voltage of 650V and a continuous drain current of 11A at TC=25°C. The device exhibits a typical on-resistance of 0.34Ω at VGS=10V. Key electrical parameters include a gate threshold voltage ranging from 2.5V to 4V, total gate charge of 21nC, and input capacitance of 901pF. Thermal resistance is specified at 1.6°C/W junction-to-case and 62°C/W junction-to-ambient. The operating junction temperature range spans from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Utilizes Super-Junction technology to achieve a very low figure of merit defined by the product of on-resistance and gate charge.
  • Encapsulated in epoxy resin that meets UL 94 V-0 flammability rating standards.
  • Manufactured as a halogen-free green device with lead-free finish compliant with RoHS directives.
  • Rated for Moisture Sensitivity Level 1 to ensure robustness during assembly processes.

Single FETs, MOSFETs Applications

  • High-frequency power conversion circuits requiring low switching losses
  • DC-DC converter topologies utilizing super-junction transistor advantages
  • General purpose high-voltage switching applications within specified thermal limits

Single FETs, MOSFETs Procurement Notes

Verify authenticity through authorized MCC distributors or direct purchase to avoid counterfeit components. Confirm the specific ordering suffix matches required packaging and compliance specifications. Ensure storage conditions adhere to moisture sensitivity level guidelines prior to soldering. Review the latest datasheet revision for any updates to maximum ratings or thermal characteristics before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 650V blocking capability with moderate current handling in a compact surface-mount footprint. Evaluate thermal management requirements against the 1.6°C/W junction-to-case resistance for your specific PCB layout. Consider the gate charge characteristics when designing drive circuits for optimal switching performance. Verify that the application voltage and current stresses remain within the absolute maximum ratings provided in the datasheet.

Single FETs, MOSFETs Part Context

This device belongs to Micro Commercial Components' line of N-channel super-junction power MOSFETs. The DFN5060 package provides a small outline suitable for space-constrained designs while offering improved thermal performance compared to traditional packages. The super-junction architecture allows for lower on-resistance relative to conventional planar MOSFETs of similar voltage ratings.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are documented in the source material.

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy for this device?

The single pulse avalanche energy is 78mJ under test conditions of IAS=1.6A, VDD=50V, RG=25Ω, and starting TJ=25°C.

Does the MSJAC11N65Y support body diode reverse recovery?

Yes, the device has a continuous body diode current rating of 9.2A and a reverse recovery time of 280ns at VR=520V and IF=IS.

MSJAC11N65Y-TPMSJAC11N65Y-TP

Click on the inquiry