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The MSKD165-12 is a glass passivated rectifier diode module from the MSKD165 series, manufactured by Microsemi Corporation. It features a single diode configuration with a maximum repetitive reverse voltage (VRRM) of 1200 V and a surge repetitive peak reverse voltage (VRSM) of 1300 V. The module supports an average forward current (IFAV) of 165 A at a case temperature of 100°C and withstands a non-repetitive surge current (IFSM) of 6000 A for 10 ms. Electrical characteristics include a forward voltage of 1.4 V at 300 A and a maximum reverse leakage current of 9 mA. Thermal resistance from junction to case is 0.18 °C/W per diode.
Verify component authenticity against official Microchip/Microsemi documentation due to potential obsolescence or discontinuation notices associated with this product family. Confirm that the specific ordering suffix matches the required voltage rating and package type. Ensure compliance with RoHS directives as specified in the datasheet. Check for any product termination notifications prior to procurement planning.
Select this module based on its 1200 V blocking capability and 165 A continuous current rating. Evaluate thermal management requirements using the specified junction-to-case thermal resistance. Consider the D2 package outline for mechanical integration. Verify that the operating temperature range of -40°C to 150°C aligns with the application environment.
This component belongs to the MSKD165, MSAD165, and MSCD165 series of glass passivated rectifier diode modules. These modules are designed for high-power industrial applications requiring robust voltage handling and efficient thermal dissipation. The series offers various voltage ratings ranging from 800 V to 1800 V, packaged in the D2 case style.
Consult official Microchip/Microsemi substitution guides for verified equivalents. Cross-reference electrical parameters such as VRRM, IFAV, and thermal resistance when evaluating alternative components.