MSL60N04

$0.13

Description：N Channel MOSFET,60V,SOT-223
Series：*
Mfr：Bruckewell
Package：Tape & Reel (TR)

SKU:72e286973592 Category: Single FETs, MOSFETs Brand: Bruckewell

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Product introduction

Product Detailed Parameters

Description：N Channel MOSFET,60V,SOT-223
Series：*
Mfr：Bruckewell
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：100mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-223
Package / Case：TO-261-4, TO-261AA

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MSL60N04

Overview

The MSL60N04 is an N-channel enhancement mode MOSFET manufactured by Bruckewell Technology Corporation. It utilizes advanced high cell density trench technology to deliver low on-resistance and optimized gate charge characteristics. The device features a drain-source voltage rating of 60 V, a continuous drain current of 4.0 A at 25°C, and a maximum power dissipation of 3.1 W. It operates within a junction temperature range of -55°C to +150°C and is housed in a SOT-223 package.

Feature Summary

Advanced high cell density Trench technology
Low On-Resistance
Low Miller Charge
Low Input Capacitance

Applications

Motor Drive
Power Tools
LED Lighting

Procurement Notes

Verify the component against the official Bruckewell datasheet (Rev. A -2020) to confirm electrical parameters and physical dimensions. Ensure the sourcing channel provides authentic parts matching the specified SOT-223 package and RoHS compliance requirements. Cross-reference the marking code with the manufacturer's documentation to validate authenticity before integration into designs.

Selection Notes

Select this component for small power switching and load switch applications requiring efficient performance. Consider the 60 V drain-source voltage and 4.0 A continuous current limits when designing circuits. Evaluate the thermal resistance and power dissipation capabilities relative to the expected operating environment and board layout constraints.

Part Context

This part belongs to the category of N-channel MOSFETs designed for general-purpose switching. It is specifically engineered for applications where low conduction losses and fast switching speeds are critical. The device meets RoHS and Green Product requirements, ensuring environmental compliance for modern electronic assemblies.