MSP150N090

MSP150N090

$1.79
  • Description:N-Channel MOSFET,150V,TO-220
  • Series:*
  • Mfr:Bruckewell
  • Package:Tape & Reel (TR)

SKU:c644c89619c6 Category: Brand:

  
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Product Detailed Parameters

  • Description:N-Channel MOSFET,150V,TO-220
  • Series:*
  • Mfr:Bruckewell
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):150 V
  • Current - Continuous Drain (Id) @ 25°C:100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:9mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220
  • Package / Case:TO-220-3

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MSP150N090

Overview

The Bruckewell MSP150N090 is an N-Channel MOSFET utilizing trench DMOS technology, designed for high-efficiency fast switching applications. It features a Drain-Source Voltage (VDS) of 150 V and a maximum continuous drain current (ID) of 100 A at TC =25°C. The device guarantees a static Drain-Source On-Resistance (RDS(on)) of 9.0 mΩ at VGS =10V and ID =20A. It supports a single pulse avalanche energy (EAS) of up to 784 mJ with L =0.5mH. Operating within a junction temperature range of -55°C to 150°C, the component is housed in a TO-220 package.

Feature Summary

  • Advanced trench DMOS technology minimizes on-resistance while providing superior switching performance.
  • Capable of withstanding high energy pulses in both avalanche and commutation modes.
  • Features super low gate charge and excellent dv/dt capability for efficient operation.
  • Manufactured as a green device compliant with RoHS requirements.

Applications

  • Networking equipment
  • Load switch circuits
  • Synchronous rectifiers
  • Quick chargers

Procurement Notes

Verify that the specific unit matches the publication order number MSP150N090 and revision Rev. A from Bruckewell Technology Corporation. Confirm compliance with RoHS standards and Green Product requirements during acquisition. Ensure the physical package corresponds to the specified TO-220 configuration. Validate all electrical parameters against the official datasheet before integration into final designs.

Selection Notes

Select this component for applications requiring high efficiency and fast switching capabilities. The 150-V rating and 100-A continuous current capacity make it suitable for robust power management tasks. Consider the thermal resistance ratings when designing heat dissipation strategies. Verify that the required avalanche energy withstands the specific circuit conditions.

Part Context

This component belongs to the family of N-Channel MOSFETs manufactured by Bruckewell Technology Corporation. It utilizes advanced trench DMOS technology tailored for minimizing RDS(ON) and enhancing switching performance. The device is specifically engineered to handle high energy pulses effectively.

Replacement Considerations

No publicly confirmed substitute part numbers are documented in the provided source material.

FAQ

What is the maximum single pulse avalanche energy supported by the MSP150N090?

The device supports a maximum single pulse avalanche energy of 784 mJ under test conditions of VDD=50V, L=0.5mH, and IAS=56A.

How does the device ensure reliability regarding avalanche energy?

The manufacturer provides a 100% EAS guarantee, ensuring full function reliability for every unit produced.

MSP150N090MSP150N090
$1.79
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