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The Bruckewell MSP150N090 is an N-Channel MOSFET utilizing trench DMOS technology, designed for high-efficiency fast switching applications. It features a Drain-Source Voltage (VDS) of 150 V and a maximum continuous drain current (ID) of 100 A at TC =25°C. The device guarantees a static Drain-Source On-Resistance (RDS(on)) of 9.0 mΩ at VGS =10V and ID =20A. It supports a single pulse avalanche energy (EAS) of up to 784 mJ with L =0.5mH. Operating within a junction temperature range of -55°C to 150°C, the component is housed in a TO-220 package.
Verify that the specific unit matches the publication order number MSP150N090 and revision Rev. A from Bruckewell Technology Corporation. Confirm compliance with RoHS standards and Green Product requirements during acquisition. Ensure the physical package corresponds to the specified TO-220 configuration. Validate all electrical parameters against the official datasheet before integration into final designs.
Select this component for applications requiring high efficiency and fast switching capabilities. The 150-V rating and 100-A continuous current capacity make it suitable for robust power management tasks. Consider the thermal resistance ratings when designing heat dissipation strategies. Verify that the required avalanche energy withstands the specific circuit conditions.
This component belongs to the family of N-Channel MOSFETs manufactured by Bruckewell Technology Corporation. It utilizes advanced trench DMOS technology tailored for minimizing RDS(ON) and enhancing switching performance. The device is specifically engineered to handle high energy pulses effectively.
No publicly confirmed substitute part numbers are documented in the provided source material.
The device supports a maximum single pulse avalanche energy of 784 mJ under test conditions of VDD=50V, L=0.5mH, and IAS=56A.
The manufacturer provides a 100% EAS guarantee, ensuring full function reliability for every unit produced.