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The MSQ40C04D is a dual N-channel and P-channel MOSFET in an SOP-8 package. It features a 40V drain-source voltage rating with continuous drain currents of 7.2A (N-ch) and -6.5A (P-ch). The device offers low on-resistance, typically 28mΩ for the N-channel and 40mΩ for the P-channel at VGS=10V. Gate charge values are 5.5nC (N-ch) and 9nC (P-ch). It supports a maximum junction temperature of +150°C and includes avalanche energy ratings of 15.8mJ (N-ch) and 37mJ (P-ch).
Verify the specific revision level against the manufacturer's latest documentation before finalizing procurement. Confirm that the SOP-8 packaging matches the required board layout dimensions. Ensure the supplier provides traceability to the Bruckewell Technology Corporation datasheet Rev. A. Validate RoHS compliance status directly from the vendor's certificate of conformity.
Select this component for synchronous buck converter applications requiring both N-channel and P-channel devices in a single package. Consider the thermal resistance of 85°C/W when designing for ambient cooling. Verify that the 40V breakdown voltage meets the system's peak transient requirements. Check that the 4.5V gate drive compatibility aligns with the controller logic levels.
This part is a trench technology MOSFET designed for high cell density. It combines N-channel and P-channel functionalities into one SOP-8 footprint. The design targets improved RDS(ON) and gate charge performance. It is intended for use in power switching circuits where space efficiency is critical.
No public confirmed substitute part numbers are available in the provided documentation.
The maximum operating junction temperature is +150°C.
Yes, the device is explicitly suited for 4.5V gate drive applications.
The single pulse avalanche energy for the P-channel is 37mJ.