MSR2N2369AU/TR

MSR2N2369AU/TR

$113.11
  • Description:RH DUAL - SMALL-SIGNAL BJT
  • Series:*

SKU:3f5318b19fb2 Category: Brand:

  
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Product Detailed Parameters

  • Description:RH DUAL - SMALL-SIGNAL BJT
  • Series:*
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • Transistor Type:-
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:-
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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MSR2N2369AU/TR

Overview

The MSR2N2369AU/TR is a silicon NPN small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It is designed for high-reliability applications, featuring a single configuration in a surface-mount package. Key electrical parameters include a collector-emitter voltage (VCEO) of 15 V, a collector-base voltage (VCBO) of 40 V, and an emitter-base voltage (VEBO) of 4.5 V. The device supports a maximum DC collector current with a minimum DC current gain (hFE) of 40 and a maximum of 120. Power dissipation is rated at 360 mW, with an operating temperature range from -65°C to +200°C.

Feature Summary

  • High-reliability construction suitable for demanding environments
  • Surface-mount packaging for automated assembly
  • Wide operating temperature range up to 200°C

Applications

  • Military aerospace circuits
  • Spacecraft electronic systems
  • High-reliability communication equipment

Procurement Notes

Verify the specific suffix AU/TR against official Microchip documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives if required by the end application. Confirm availability status directly with authorized distributors as supply levels may vary. Validate that the component meets all necessary military or industrial qualification standards before integration into final designs.

Selection Notes

Select this component when high reliability and wide temperature operation are critical requirements. Compare hFE ranges and power dissipation limits against circuit demands. Consider the surface-mount form factor for PCB space constraints. Verify compatibility with existing manufacturing processes for lead-free soldering if applicable. Evaluate alternative packages if through-hole mounting is preferred for mechanical stability.

Part Context

This part belongs to Microchip's portfolio of high-reliability discrete semiconductors. It serves as a specialized variant within the broader BJT category, tailored for sectors requiring stringent performance under extreme conditions. The designation indicates specific processing and testing protocols distinct from commercial-grade equivalents.

Replacement Considerations

Consult official Microchip substitution guides for verified alternatives. Cross-reference pinouts and electrical characteristics carefully. Ensure any substitute maintains the same high-reliability classification and package dimensions.

MSR2N2369AU/TRMSR2N2369AU/TR
$113.11
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